D2083UK datasheet, PDF - EEWORLD Datasheet

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D2083UK: Description2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size12KB，1 Pages; ManufacturerSEMELAB

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D2083UK Overview

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

D2083UK Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F4
Number of components	2
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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D2083UK

MECHANICAL DATA

(4 pls)

(typ)

TetraFET

80W – 28V – 1.0GHz

DIM

PIN 1

PIN 3

13.97

5.72

45°

9.78

1.65R

23.75

1.52R

30.48

19.17

0.13

2.54

1.52

5.08

Tol.

0.26

0.13

5°

0.13

0.26

0.02

0.13

0.50

Inches

0.550

0.225

45°

0.385

0.065R

0.935

0.060R

1.200

0.755

0.005

0.100

0.060

0.200

DRAIN 1

GATE 2

Tol.

0.010

0.005

5°

0.005

0.010

0.001

0.005

0.020

SOURCE (COMMON) PIN 2

DRAIN 2

GATE 1

PIN 4

PIN 5

ELECTRICAL CHARACTERISTICS

case

= 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

PER SIDE

DSS

GSS

GS(th)

iss

oss

rss

GS(th)match

Drain–Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Leakage Current

Gate Threshold Voltage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Threshold Matching Voltage

Between Sides

= 80W

f = 1GHz

V = 28V

I = 100mA

V = 28V

V = 20V

I = 10mA

V = 10V

T = 300µS

= 0V

V = 28V

= 10mA

= V

= -5V

I = 2A

Typ.

Max. Unit

µA

mhos

0.1

2.5

128

2.7

TOTAL DEVICE

= 2A

Thermal Resistance = 0.72 °C / W

HAZARDOUS MATERIAL WARNING

The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly

toxic and care must be taken during handling and mounting to avoid damage to this area.

THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 5/96

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