D25SB60 datasheet, PDF - EEWORLD Datasheet

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D25SB60: DescriptionBridge Rectifier Diode, 25A, 600V V(RRM),; CategoryDiscrete semiconductor diode; File Size41KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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D25SB60 Overview

Bridge Rectifier Diode, 25A, 600V V(RRM),

D25SB60 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	350 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	25 A
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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LESHAN RADIO COMPANY

，

LTD.

D25SB10(RBV2502S) Thru D25SB100(RBV2507S)

FEATURES

．Plastic

Package has Underwriters Laboratory

Flammability Classification 94V-0

．This

series is UL listed under the Recognized

Component index,file number E231047

．Single-in-line

package

．High

current capality with small package

．Superior

thermal conductivity

．High

temperature soldering guaranted:

260℃/10 seconds

．High

FSM

Maximum Ratings & Thermal Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter Symbol

Maximum repetitive voltage

Maximum DC reverse current

at rated DC blocking voltage

TA=25℃

TA=125℃

Symbol

D25SB10 D25SB20

D25SB40 D25SB60 D25SB80 D25SB100

Unit

µA

RBV2502S RBV2503S RBV2504S RBV2505S RBV2506S RBV2507S

100

200

400

500

600

800

1000

Average rectified forward current 60Hz Sine wave

Resistance load with heat sink Tc=100℃

Peak forward surge current 8.3ms single half sine-

wave superimposed on rated load

Dielectric strength Terminals to case，

AC 1 minute Current 1mA

Max instantaneous forward voltage at 12.5A

Operating junction temperature

Storage temperature

FSM

350

Vdia

Tstg

2.5

1.1

150

-40~150

℃

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