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D4SB100

Description
Bridge Rectifier Diode, 6A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size104KB,1 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric View All

D4SB100 Overview

Bridge Rectifier Diode, 6A, 1000V V(RRM),

D4SB100 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-609 codee0
Maximum non-repetitive peak forward current120 A
Number of components4
Maximum operating temperature150 °C
Maximum output current6 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
LESHAN RADIO COMPANY
LTD.
D4SB10(KBJ601G) Thru D4SB100(KBJ610G)
FEATURES
Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
This series is UL listed under the Recognized
Component index,file number E231047
Single-in-line package
High current capality with small package
Superior thermal conductivity
High temperature soldering guaranted:
260
/10 seconds
High I
FSM
Maximum Ratings & Thermal Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Parameter Symbol
Maximum repetitive voltage
Maximum DC reverse current
at rated DC blocking voltage
TA=25℃
TA=125℃
Symbol
V
RM
I
R
D4SB10
D4SB20
D4SB40
D4SB60
D4SB80
D4SB100
Unit
V
µA
KBJ601G KBJ602G KBJ604G KBJ606G KBJ608G KBJ610G
100
200
400
10
500
6
120
2.5
1.1
150
600
800
1000
Average rectified forward current 60Hz Sine wave
Resistance load with heat sink Tc=100℃
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load
Dielectric strength Terminals to case,
AC 1 minute Current 1mA
Maximum instantaneous forward voltage at 3A
Operating junction temperature
Storage temperature
Io
I
FSM
Vdia
V
F
T
J
Tstg
A
A
KV
V
-40~150

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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