D4SB20 datasheet, PDF - EEWORLD Datasheet

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D4SB20: DescriptionBridge Rectifier Diode, 6A, 200V V(RRM),; CategoryDiscrete semiconductor diode; File Size36KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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D4SB20 Overview

Bridge Rectifier Diode, 6A, 200V V(RRM),

D4SB20 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-609 code	e0
Maximum non-repetitive peak forward current	120 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	6 A
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

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LESHAN RADIO COMPANY

，

LTD.

D4SB10(KBJ601G) Thru D4SB100(KBJ610G)

FEATURES

．Plastic

Package has Underwriters Laboratory

Flammability Classification 94V-0

．This

series is UL listed under the Recognized

Component index,file number E231047

．Single-in-line

package

．High

current capality with small package

．Superior

thermal conductivity

．High

temperature soldering guaranted:

260℃/10 seconds

．High

I

FSM

Maximum Ratings & Thermal Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

D4SB10

D4SB20

D4SB40

D4SB60

D4SB80

D4SB100

Parameter Symbol

Maximum repetitive voltage

Maximum DC reverse current

at rated DC blocking voltage

TA=25℃

TA=125℃

Symbol

KBJ601G KBJ602G KBJ604G KBJ606G KBJ608G KBJ610G

Unit

100

200

400

10

500

6

600

800

1000

V

µA

V

RM

I

R

Average rectified forward current 60Hz Sine wave

Resistance load with heat sink Tc=100℃

Peak forward surge current 8.3ms single half sine-

wave superimposed on rated load

Dielectric strength Terminals to case，

AC 1 minute Current 1mA

Maximum instantaneous forward voltage at 3A

Operating junction temperature

Storage temperature

Io

A

I

FSM

120

A

Vdia

V

F

T

J

Tstg

2.5

1.1

150

-40~150

KV

V

℃

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