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D4SB20

Description
Bridge Rectifier Diode, 2.3A, 200V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size212KB,2 Pages
ManufacturerRugao Dachang Electronics Co., Ltd.
Download Datasheet Parametric Compare View All

D4SB20 Overview

Bridge Rectifier Diode, 2.3A, 200V V(RRM)

D4SB20 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
Maximum non-repetitive peak forward current150 A
Number of components4
Maximum operating temperature150 °C
Maximum output current2.3 A
Maximum repetitive peak reverse voltage200 V
surface mountNO
Base Number Matches1
SIYU
R
塑封硅整流桥堆
反向电压
200---800V
正向电流
4.0 A
特征
Features
.134(3.4)
.122(3.1)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.382(9.7)
.366(9.3)
D4SB20...... D4SB80
Single-phase Silicon Bridge Rectifier
Reverse Voltage 200 to 800 V
Forward Current 4.0A
·½的反向漏电流
Low reverse leakage
·较强的正向浪涌承受½力
High forward surge capability
·浪涌承受½力:170 A Surge
overload rating:170 Amperes peak
.602(15.3)
.578(14.7)
.157
(4.0)
¢.134(8.4)
.122(3.1)
.995(25.3)
.983(24.7)
.057(1.45)
.041(1.05)
.083(2.1)
.069(1.7)
.043(1.1)
.035(0.9)
+
~
~
-
.708(18.0)
.669(17.0)
机械数据
Mechanical Data
.114(2.8)
.098(2.5)
·封装:
塑料封装
Case: Molded Plastic
·极性:
标记模压或印于本½
Polarity: Symbols molded or marked on body
·安装½½:
任意
·重量: 4.6
Mounting Position: Any
Weight:4.6 Grams
.074(1.9)
.059(1.5)
.146(3.7)
.130(3.3)
.031(0.8)
.023(0.6)
.303(7.7) .303(7.7) .303(7.7)
.287(7.3) .287(7.3) .287(7.3)
Unit:inch(mm)
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
加散热片T
C
=108℃
Maximum average forward rectified current
无散热片Ta=25℃
Ratings at 25℃ ambient temperature unless otherwise specified.
D4SB20
200
140
200
D4SB40
400
280
400
4.0
2.3
150
30
6
D4SB60
600
420
600
D4SB80
800
560
800
单½
Unit
V
V
V
A
A
µA
℃/W
V
RRM
V
RMS
V
DC
I
F(AV)
I
F(AV)
I
FSM
I
R(AV)
R
θJA
Tj, TSTG
最大正向平均整流电流
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
@TA = 75℃
最大反向峰值电流
Maximum
peak
reverse current full cycle
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-50 --- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
D4SB20
D4SB40
0.95
10
D4SB60
D4SB80
单½
Unit
V
µA
I
F
= 2.0A
TA= 25℃
V
F
最大反向电流
Maximum reverse current
典型结电容
V
R
=
4.0V, f = 1MHz
Type junction capacitance
I
R
Cj
40
pF
- 115 -
大昌电子
DACHANG ELECTRONICS

D4SB20 Related Products

D4SB20 D4SB60
Description Bridge Rectifier Diode, 2.3A, 200V V(RRM) Bridge Rectifier Diode, 2.3A, 600V V(RRM)
Reach Compliance Code unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 0.95 V 0.95 V
Maximum non-repetitive peak forward current 150 A 150 A
Number of components 4 4
Maximum operating temperature 150 °C 150 °C
Maximum output current 2.3 A 2.3 A
Maximum repetitive peak reverse voltage 200 V 600 V
surface mount NO NO
Base Number Matches 1 1
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