SIYU
R
塑封硅整流桥堆
反向电压
200---800V
正向电流
4.0 A
特征
Features
.134(3.4)
.122(3.1)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.382(9.7)
.366(9.3)
D4SB20...... D4SB80
Single-phase Silicon Bridge Rectifier
Reverse Voltage 200 to 800 V
Forward Current 4.0A
·½的反向漏电流
Low reverse leakage
·较强的正向浪涌承受½力
High forward surge capability
·浪涌承受½力:170 A Surge
overload rating:170 Amperes peak
.602(15.3)
.578(14.7)
.157
(4.0)
¢.134(8.4)
.122(3.1)
.995(25.3)
.983(24.7)
.057(1.45)
.041(1.05)
.083(2.1)
.069(1.7)
.043(1.1)
.035(0.9)
+
~
~
-
.708(18.0)
.669(17.0)
机械数据
Mechanical Data
.114(2.8)
.098(2.5)
·封装:
塑料封装
Case: Molded Plastic
·极性:
标记模压或印于本½
Polarity: Symbols molded or marked on body
·安装½½:
任意
·重量: 4.6
克
Mounting Position: Any
Weight:4.6 Grams
.074(1.9)
.059(1.5)
.146(3.7)
.130(3.3)
.031(0.8)
.023(0.6)
.303(7.7) .303(7.7) .303(7.7)
.287(7.3) .287(7.3) .287(7.3)
Unit:inch(mm)
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
加散热片T
C
=108℃
Maximum average forward rectified current
无散热片Ta=25℃
Ratings at 25℃ ambient temperature unless otherwise specified.
D4SB20
200
140
200
D4SB40
400
280
400
4.0
2.3
150
30
6
D4SB60
600
420
600
D4SB80
800
560
800
单½
Unit
V
V
V
A
A
µA
℃/W
V
RRM
V
RMS
V
DC
I
F(AV)
I
F(AV)
I
FSM
I
R(AV)
R
θJA
Tj, TSTG
最大正向平均整流电流
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
@TA = 75℃
最大反向峰值电流
Maximum
peak
reverse current full cycle
典型热阻
Typical thermal resistance
工½结温和存储温度
Operating junction and storage temperature range
-50 --- +150
℃
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
D4SB20
D4SB40
0.95
10
D4SB60
D4SB80
单½
Unit
V
µA
I
F
= 2.0A
TA= 25℃
V
F
最大反向电流
Maximum reverse current
典型结电容
V
R
=
4.0V, f = 1MHz
Type junction capacitance
I
R
Cj
40
pF
- 115 -
大昌电子
DACHANG ELECTRONICS
SIYU
R
特性曲线
Characteristic Curves
正向特性曲线(典型值)
TYPICAL FORWARD CHARACTERISTIC
10
D4SB20...... D4SB80
正向电流降额曲线
FORWARD CURRENT DERATING CURVE
4.0
on glass-epoxi substrate
I
F
Instantaneous Forward Current (A)
Tl=150℃
平均正向电流
I
F(AV)
(A)
Average Forward Rectified Current (A)
+
~
~
-
3.0
P.C.B.
soldering land 5mmф
sine wave R-load
free in air
正向电流 I
F
(A)
1
2.0
Tl=25℃
1.0
0.1
0
0.2
0.4
0.6
Pulse measurement
per diode
I
F(A)
00
40
80
120
160
0.8
1
1.2
V
F
正向电压 V
F
(V)
Instantaneous Forward Voltage (V)
环境温度 Ta(°C)
Tamb, ambient temperature (°C)
功率损耗曲线
浪涌特性曲线(最大值)
MAXIMUM NON REPETITIVE
PEAK FORWARD SURGE CURRENT
I
FSM
200
14
12
FORWARD POWER DISSIPATION
10mS
10mS
1 Cycle
FORWARD POWER DISSIPATION P
F
(W))
I
FSM
Peak Forward Surge Current (A)
non-repetitive
Tj=25℃ before
10
8
6
4
2
0
峰值正向浪涌电流 I
FSM
(A)
100
功率损耗
P(W)
Sine wave
Tj=150℃
0
1
2
3
4
5
6
7
0
0
2
5
10
20
50
100
通过电流的周期
Number of Cycles at 60 Hz.
平均整流电流 I
0
[A]
AVERAGE RECGIFIED FORWARD
CURRENT I
o
(A)
正向电流降额曲线
FORWARD CURRENT DERATING CURVE
6.0
Tc-sensing point
平均正向电流
I
F(AV)
(A)
Average Forward Rectified Current (A)
+
~
~
-
4.5
Tc
sine wave R-load
with heatsink
3.0
1.5
I
F(A)
00
40
80
120
160
环境温度 T
C
(°C)
Case Temperature Tc(℃)
大昌电子
DACHANG ELECTRONICS
- 116 -