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D4SB40TY

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size284KB,4 Pages
ManufacturerFagor Electrónica
Download Datasheet Parametric View All

D4SB40TY Overview

Bridge Rectifier Diode,

D4SB40TY Parametric

Parameter NameAttribute value
package instructionR-PSFM-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current150 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2.3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage400 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
D4SB40.......D4SB100
4.0 Amp. Glass Passivated Single Phase In Line Bridge Rectifier
Voltage
400 V to 1000 V
Current
4.0 A
IN LINE MEDIUM
~
~
~
~
FEATURES
• UL recognition file number
E320541, Vol. 2
• Ideal for printed circuit board
• High case dielectric strength of 2000 Vrms
• High surge current capability
• Solder dip 260ºC, 10s
• Component in accordance to RoHS 2011/65/EU
and WEEE 2002/96/EC
MECHANICAL DATA
• Case
:
IN LINE MEDIUM. Epoxy meets UL 94V-0
flammability rating.
• Polarity
:
As marked on body
• Mounting
Torque
:
5.5cm-kg (5 in.- Ibs.)
• Terminals
:
Matte tin plated leads, solderable per
MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.
Consumer grade, meets JESD 201 class 1A whisker test.
TYPICAL APPLICATIONS
Used in ac-to-dc bridge full wave rectification for monitor,
TV, printer, switching mode power supply, adapter, audio
equipment, and home appliances applications.
Maximum Ratings and Electrical Characteristics at 25 ºC
D4SB40
D4SB60
D4SB60
600
420
D4SB80
D4SB80
800
560
D4SB100
D4SB100
1000
700
Marking Code
V
RRM
V
RMS
I
F(AV)
I
FSM
V
DIS
I
2
t
T
j
T
stg
Peak recurrent reverse voltage (V)
Maximum RMS Voltage (V)
Max. Average forward current
Peak forward surge current 10ms single half
sine-wave superimposed on rated load
(
Jedec Method
)
Dielectric strength (terminals to case, AC 1 min.)
Current squared time (rating for fusing)
(1ms.<t<10ms. Tc = 25ºC)
Operating temperature range
Storage temperature range
D4SB40
400
280
4.0 A at Tc = 115 °C
(Note 1)
2.3 A at T
A
= 40 °C
(Note 2)
150 A
2000 V
93 A
2 sec
-55 to +150 °C
-55 to +150 °C
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
th (j-c)
R
th (j-a)
Max. forward voltage drop per diode at I
F
= 2.0 A
I
F
= 4.0 A
Max. instantaneous reverse current at V
RRM
Typical Thermal Resistance
Junction-case
Junction-Ambient
1.00 V
1.10 V
5 µA
5 °C/W
26 °C/W
(Note 1)
(Note 2)
Notes: 1. Unit case mounted on 6.3 x 6.3 x 0.15cm thick Al plate heatsink.
2. Units mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads and 0.375" (9.5 mm) lead length.
www.fagorelectronica.com
Document Name: d4sb
Version: Sep-15
Page Number: 1/4

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