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D2218UK

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size17KB,2 Pages
ManufacturerSEMELAB
Environmental Compliance
Download Datasheet Parametric View All

D2218UK Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DP, 3 PIN

D2218UK Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-CDSO-F2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDSO-F2
JESD-609 codee4
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
TetraFET
D2218UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
2
A
3
B
D
( 2 p ls )
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 1GHz
SINGLE ENDED
FEATURES
E
1
G
H
F
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN
DP
PIN 1
PIN 3
SOURCE
GATE
PIN 2
• LOW C
rss
• SIMPLE BIAS CIRCUITS
DIM
A
B
C
D
E
F
G
H
mm
16.51
6.35
45°
1.52
6.35
0.13
3.56
0.64
Tol.
0.25
0.13
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.060
0.250
0.005
0.140
0.024
Tol.
0.010
0.005
0.005
0.005
0.001
0.020
0.005
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
70W
40V
±20V
16A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
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