THREE PHASE DIODE＋THYRISTOR
DFA200AA80/160
UL;E76102 M）
（
SanRex
Power Module,
DFA200AA,
is complex isolated
module which is designed for rash current circuit.
It contains six diodes connected in a three phase bridge
configuration, and a thyristor connected to a direct current line.
●
This
１８
０
９± ．
３ ０３
２
２
２ １．
２ ５５
１． ２
３５ ０
M
４
８
depth １ mm
０
１
２
R
２
R
２
＋
＋
−
−
４φ .
- ５８
diode module and thyristor put together.
●
This
Module is also isolated type between electorode
R2
G
＋
terminal and mounting base. So you can put this
Module and other one together in a same fin.
（Application）
●
Inverter for AC or DC motor control, Current stabilized
power supply, Switching power supply.
∼
∼
∼
６ ６
-M
depth １ mm
０
R
R
S
S
T
T
２
８
４
２
２
２
２
２
１
２．
８５
７
２± ．
７ ０３
−
Unit：㎜
●DIODE
■Mximum
Ratings
Symbol
V
RRM
V
RSM
Symbol
I
D
I
FSM
Tj
Tstg
V
ISO
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Output Current (D.C.)
Surge forward current
Operating Junction Temperature
Storage Temperature
Isolation Breakdown Voltage (R.M.S.)
Mounting
Torque
Mass
Mounting
（M5）
Terminal（M6）
Terminal（M4）
A.C. 1minute
Recommended Value 1.5-2.5（15-25）
Recommended Value 2.5-3.9（25-40）
Recommended Value 1.0-1.4（10-14）
Typical Value
Ratings
DFA200AA80
800
960
Conditions
Three phase full wave, Tc＝96℃
（Tj＝25℃ unless otherwise specified）
DFA200AA160
1600
1700
Ratings
200
1850/2000
−30
to
＋150
−30
to
＋135
2500
2.7（28）
4.7（48）
1.5（15）
460
N½m
（㎏f½B）
g
Unit
V
V
Unit
A
kA
℃
℃
V
１cycle,
50/60H
Z
, peak value, non-repetitive
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current,max.
Forward Voltage Drop,max.
Conditions
T
j
＝150℃,
V
R
=V
RRM
I
F
＝200A
Inst. measurement
Junction to Case（TOTAL）
Ratings
20
1.35
0.10
Unit
mA
V
℃/W
Rth j-c） Thermal Impedance, max.
（
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
１
８ ２
３
４ ．± ．
８０ ０３
６
２
２．
４５
Module is designed very compactly. Because
G
DFA200AA80/160
●THYRISTOR
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
（
I
T AV）
（Tj＝25℃ unless otherwise specified）
Item
Ratings
DFA200AA80
800
960
800
Conditions
Singl phase half wave. 180°
conduction, Tc＝93℃
1
cycle,
／
2
DFA200AA160
1600
1700
1600
Ratings
200
1850/2000
17000
200
2500
−30
to
＋135
−30
to
＋135
2.7（28）
4.7（48）
1.5（15）
460
Unit
V
V
V
Unit
A
A
A
2
S
A/
μs
V
℃
℃
N½m
（㎏f½B）
g
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
Average On-State Current
Surge On-State Current
I
2
t (for fusing)
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Storage Temperature
Mounting
Torque
Mass
Mounting
（M5）
Terminal（M6）
Terminal（M4）
I
TSM
I
2
t
di／dt
V
ISO
Tj
Tstg
50/60H
Z
, peak value, non-repetitive
Value for one of surge current
I
G
＝100mA，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
di
μs
A.C. 1minute
Tj＝125℃∼135℃
Recommended Value 1.5-2.5（15-25）
Recommended Value 2.5-3.9（15-25）
Recommended Value 1.0-1.4（15-25）
Typical Value
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
dv／dt
Item
Repetitive Peak off-State Current,max.
Repetitive Peak Reverse Current,max.
Peak on-State Voltagea,max.
Gate Trigger Current,max.
Gate Trigger Voltage,max.
Critical Rate of off-State Voltaget,min.
Conditions
Tj＝135℃，V
D
＝V
DRM
Tj＝135℃，V
D
＝V
DRM
I
T
＝200A
Inst. measurement
V
D
＝6V，I
T
＝1A
V
D
＝6V，I
T
＝1A
Tj＝125℃，V
D
＝
2 3
V
DRM
／
Junction to Case
Ratings
50
50
1.15
100
3
500
0.18
Unit
mA
mA
V
mA
V
V/
μs
℃/W
Rth j-c） Thermal Impedance, max.
（
５
DIODE Maximum Forward Characteristics
Power Dissipation Pav W）
（
８０
０
７０
０
６０
０
５０
０
４０
０
３０
０
２０
０
１０
０
Output Current vs. Power Dissipation
SCR＋DIODE
（Single Phase）
SCR＋DIODE
（Three Phase）
DIODE
（Single Phase）
DIODE
（Three Phase）
Forward Current I（A）
F
２
１
２
０
５
２
１
１
０
５
２
１
０
０６
．
０
SCR
Ｔ= ５
½２ ℃
Ｔ =１ ０
½ ５℃
０８
．
１０
．
１２
．
１４
．
１６
．
１８
．
２０
．
０
０
５
０
１０
０
１０
５
２０
０
２０
５
Forward Voltage Drop V（V）
F
Output Current I
D
A）
（
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DFA200AA80/160
Allowable Case Temperature Tc
（℃）
２０
０
Output Current vs.
Allowable case Temperature
２０
５０
DIODE Surge Forward Current Rating
（Non-Repetitive）
Per one element
Tj＝25℃ start
１０
５
Diode
SCR
Three Phase
２０
００
１０
５０
１０
０
１０
００
５
０
６ H
Z
０
５０
０
０
０
１
０
０
０
５
０
１０
０
１０
５
２０
０
２０
５
２
５
１
１
０
２
５
１
２
０
Output Current I
D
A）
（
Transient Thermal Impedance
θ
（℃/W）
j-c
Time
（Cycles）
０１
.５
DIODE Transient Thermal Impedance
２
１
１
０
Gate Characteristics
Peak Forward Gate Voltage
（10V）
Av
er
Pe
ak
Ga
te
eG
ate
Po
Gate Voltage
（V）
０１
.
５
２
１
0
０
−１ ℃
０
we
（３
r
W
）
）
００
.５
Junction to Case
５
１５
３℃
２℃
５
Maximum Gate Non-Trigger Voltage
０
５
１
−１
０
２
５
Time
t
sec）
（
１
０
０
２
５
１
１
０
２
５
２
１
１
０
２
５
１
２
０
２
５
１
３
０
２
Peak Gate Current ３
（ A）
ag
Po
we
（１
r
０W
５
Gate Current
（mA）
Surge Forward Current I
FSM
（A）
５
SCR On-State Characteristics
２０
５０
Surge On-State Current Rating
（Non-Repetitive）
Per one element
Tj＝25℃ start
On-State Peak Current I（A）
T
２
１
３
０
５
２
１
２
０
５
２
１
１
０
０５
．
1．
０
２０
．
Ｔ= ５
½２ ℃
Ｔ =１ ５
½ ３℃
２０
００
１０
５０
１０
００
６ H
Z
０
５０
０
０
０
１
０
３０
．
２
５
１
１
０
２
５
１
２
０
On-State Voltage
（V）
Transient Thermal Impedance
θ
（℃/W）
j-c
Time
（Cycles）
０２
.
SCR Transient Thermal Impedance
０１
.
Junction to Case
０
−３
１
０ ２
５ １
−２
２
０
Time
t
sec）
（
５ １
−１
２
０
５ １
０
２
０
０
５ １
１
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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