THREE PHASE DIODE＋THYRISTOR
DFA100BA80/160
SanRex
Power Module,
DFA100BA,
is complex isolated
module which is designed for rash current circuit.
It contains six diodes connected in a three phase bridge
●
This
８
０
３
２
1
5
4
0
３
０
2
２
０
configuration, and a thyristor connected to a direct current line.
Module is designed very compactly. Because
１
８
１
１
7
１
７
0
6 7
1
5
4
3
3
●
This
Module is also isolated type between electorode
４０
.
２
９
２
０
９ ５
３. MAX
２
０
terminal and mounting base. So you can put this
Module and other one together in a same fin.
（Application）
●
Inverter for AC or DC motor control, Current stabilized
power supply, Switching power supply.
2
２ MAX
２
Unit：㎜
●DIODE
■Maximum
Ratings
Symbol
V
RRM
V
RSM
Symbol
I
D
I
FSM
Tj
Tstg
V
ISO
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Output Current (D.C.)
Surge forward current
Operating Junction Temperaturea
Storage Temperature
Isolation Breakdown Voltage (R.M.S.)
Mounting
Torque
Mass
Mounting
（M5）
Terminal（M5）
A.C. 1minute
Recommended Value 1.5-2.5（15-25）
Recommended Value 1.5-2.5（15-25）
Typical Value
Ratings
DFA100BA80
800
960
Conditions
Three phase full wave, Tc＝98℃
（Tj＝25℃ unless otherwise specified）
DFA100BA160
1600
1700
Ratings
100
1186/1300
−40
to
＋150
−40
to
＋125
2500
2.7（28）
2.7（28）
150
Unit
V
V
Unit
A
A
℃
℃
V
N½m
（kgf½B）
g
１cycle,
50/60H
Z
, peak value, non-repetitive
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current,max.
Forward Voltage Drop,max.
Conditions
T
j
＝150℃，V
R
=V
RRM
Tj＝25℃，I
F
＝100A，Inst.
measurement
Junction to Case（TOTAL）
Case to Fin
Ratings
12
1.30
0.20
0.10
Unit
mA
V
℃/W
℃/W
Rth j-c） Thermal Impedance, max.
（
Rth c-f） Thermal Impedance, max.
（
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
１
７
diode module and thyristor put together.
５ . MAX
０５
6
DFA100BA80/160
●THYRISTOR
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
（
I
T AV）
（Tj＝25℃ unless otherwise specified）
Item
Ratings
DFA100BA80
800
960
800
Conditions
Singl phase half wave. 180°
conduction, Tc＝92℃
１cycle,
50/60H
Z
, peak value, non-repetitive
I
G
＝100mA，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
di
μs
A.C. 1minute
DFA100BA160
1600
1700
1600
Ratings
100
1186/1300
7030
150
2500
−40
to
＋135
−40
to
＋125
Recommended Value 1.5-2.5（15-25）
Recommended Value 1.5-2.5（15-25）
Typical Value
2.7（28）
2.7（28）
150
Unit
V
V
V
Unit
A
A
A
2
S
A/
μs
V
℃
℃
N½m
（㎏f½B）
g
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak off-State Voltage
Item
Average On-State Current
Surge On-State Current
I
2
t
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Storage Temperature
Mounting
Torque
Mass
Mounting
（M5）
Terminals M5）
（
I
TSM
I
2
t
di／dt
V
ISO
Tj
Tstg
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
dv／dt
Item
Repetitive Peak Off-State Current,max.
Repetitive Peak Reverse Current,max.
Peak On-State Voltage,max.
Gate Trigger Current,max.
Gate Trigger Voltage,max.
Critical Rate of Rise of Off-
State Voltage,min.
Conditions
Tj＝135℃，V
D
＝V
DRM
Tj＝135℃，V
D
＝V
RRM
Tj＝25℃，I
TM
＝100A，Inst.
measurement
V
D
＝6V，I
T
＝1A
V
D
＝6V，I
T
＝1A
Tj＝125℃，V
D
＝
2 3
V
DRM
／
Junction to Case
Case to Fin
Ratings
70
70
1.20
70
3
500
0.36
0.10
Unit
mA
mA
V
mA
V
V/
μs
℃/W
℃/W
Rth j-c） Thermal Impedance, max.
（
Rth c-f） Thermal Impedance, max.
（
１０
００
DIODE Maximum Forward Characteristics
Max.
３０
０
DIODE Output Current vs. Power Dissipation
Forward Current I（A）
F
５０
０
２０
０
１０
０
５
０
Power Dissipation Pav W）
（
２０
５
２０
０
１０
５
Three Phase
１０
０
５
０
０
０
Ｔ= ５
½２ ℃
２
０
１
０
０５
．
１０
．
１５
．
２０
．
２５
．
２
０
４
０
６
０
８
０
１０
０
１０
２
Forward Voltage Drop V（V）
F
Output Current I
D
A）
（
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DFA100BA80/160
Allowable Case Temperature Tc
（℃）
１０
４
１０
３
１０
２
１０
１
１０
０
９
０
８
０
０
２
０
４
０
６
０
８
０
Three Phase
Surge Forward Current I
FSM
（A）
１０
５
DIODE Output Current vs.
Allowable case Temperature
１０
４０
１０
２０
１０
００
８０
０
６０
０
４０
０
２０
０
Surge Forward Current Rating
（Non-Repetitive）
Per one element
６ Hz
０
５ Hz
０
Ｓ½½ ½ ½ ½½Start½ ½
½½½ ½ ½ ½ ½ ½
½
½
Ｔ = ５ start
½２ ℃
１０
０
１０
２
０
１
２
５
１
０
２
０
５
０
１０
０
Output Current I
D
A）
（
Transient Thermal Impedance
θ
（℃/W）
j-c
Time
（Cycles）
１
０
０
５
２
１
−１
０
５
２
１
−２
０
５
２
１
−３
０
５
２
１
−４
０
５
２
１
−５ ー６
０
１ ２
０
１
−２
２
０
DIODE Transient Thermal Impedance
１０
０
５
０
Gate Characteristics
Gate Voltage
（V）
Peak Forward Gate Voltage
（10V）
Av
e ra
１
０
５
２
１
０５
．
０２
．
０１
．
１
０
１５
３℃
２℃
５
−１ ℃
０
ak
Ga
te
Po
ge
Ga
te
we
（１
r
０W
Po
）
we
（３
r
W）
Maximum
Maximum Gate Non-Trigger Voltage
５ １
ー５
２
０
５ １
−１
２
０
Time
t
sec）
（
０
５ １
ー４
２
５ １
０
２
０
５ １
ー３
２
０
５ １
１
０
０
５ １
ー２
２
０
５ １０ ２０
０ ０
０
５０ １０ ２０
０ ００ ００
５０ １００
００ ００
Gate Current
（mA）
１０
００
SCR Maximum Forward Characteristics
Max.
１０
４
SCR Output Current vs. Power Dissipation
On-State Peak Current I（A）
T
５０
０
２０
０
１０
０
５
０
Ｔ= ５
½２ ℃
Power Dissipation Pav W）
（
１０
２
１０
０
８
０
６
０
４
０
２
０
０
０
２
０
４
０
６
０
８
０
１０
０
１０
２
２
０
１
０
０５
．
１０
．
１５
．
２０
．
２５
．
On-State Voltage Drop V
TM
（V）
Maximam Allowable Case Temperature
（℃）
Transient Thermal Impedance
θ
（℃/W）
j-c
Output Current
（A）
１０
６
１０
４
１０
２
１０
０
８
０
６
０
４
０
２
０
SCR Output Current vs.
Maximum Allowable case Temperature
０
０
２
０
４
０
６
０
８
０
１０
０
１０
２
Output Current
（A）
１
０
０
５
２
１
−１
０
５
２
１
−２
０
５
２
１
−３
０
５
２
１
−４
０
５
２
１
−５ ー６
０
１ ２
０
１
−２
２
０
SCR Transient Thermal Impedance
Junction to Case
Maximum
５ １
ー５
２
０
５ １
−１
２
０
Time
t
sec）
（
０
５ １
ー４
２
５ １
０
２
０
５ １
ー３
２
０
５ １
１
０
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
Peak Gate Current ３
（ A）
Junction to Case
２
０
Pe
０
５ １
ー２
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