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D1017UK

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DM, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size222KB,5 Pages
ManufacturerSEMELAB
Environmental Compliance
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D1017UK Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DM, 4 PIN

D1017UK Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, O-CRFM-F4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage70 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
JESD-609 codee4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
TetraFET
D1017UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
B
C
1
2
D
E
4
M
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DM
PIN 1
PIN 3
SOURCE
SOURCE
PIN 2
PIN 4
DRAIN
GATE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
mm
24.76
18.42
45°
6.35
3.17 Dia.
5.71
12.7 Dia.
6.60
0.13
4.32
3.17
26.16
Tol.
0.13
0.13
0.13
0.13
0.13
0.13
REF
0.02
0.13
0.13
0.25
Inches
0.975
0.725
45°
0.25
0.125 Dia.
0.225
0.500 Dia.
0.260
0.005
0.170
0.125
1.03
Tol.
0.005
0.005
0.005
0.005
0.005
0.005
REF
0.001
0.005
0.005
0.010
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
220W
70V
±20V
30A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
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