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D2002UK

Description
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size90KB,5 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
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D2002UK Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DP, 3 PIN

D2002UK Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionCERAMIC, DP, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
Maximum drain current (ID)2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F2
JESD-609 codee4
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
TetraFET
D2002UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
C
N
(typ)
B
3
D
(2 pls)
2
1
A
F
(2 pls)
H
J
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
• SIMPLE BIAS CIRCUITS
DP
PIN 1
PIN 3
SOURCE
GATE
PIN 2
DRAIN
DIM
mm
A
16.51
B
6.35
C
45°
D
3.30
E
18.92
F
1.52
G
2.16
H
14.22
I
1.52
J
6.35
K
0.13
M
5.08
N 1.27 x 45°
Tol.
0.25
0.13
0.13
0.08
0.13
0.13
0.08
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.130
0.745
0.060
0.085
0.560
0.060
0.250
0.005
0.200
0.050 x 45°
Tol.
0.010
0.005
0.005
0.003
0.005
0.005
0.003
0.005
0.005
0.001
0.020
0.005
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
29W
65V
±20V
2A
–65 to 150°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Document Number 3500
Issue 2

D2002UK Related Products

D2002UK D2002UKG4
Description RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, DP, 3 PIN RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC, DP, 3 PIN
Is it Rohs certified? conform to conform to
package instruction CERAMIC, DP, 3 PIN ROHS COMPLIANT, CERAMIC, DP, 3 PIN
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Shell connection SOURCE SOURCE
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V
Maximum drain current (ID) 2 A 2 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F2 R-CDFM-F2
JESD-609 code e4 e4
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface GOLD GOLD
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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