TetraFET
D2004UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
A
K
B
(2
pls)
E
C
1
2
3
D
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
G
(4
pls)
F
H
J
I
M
N
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DK
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5°
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
PIN 4
DRAIN 1
GATE 2
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
58W
65V
±20V
2A
–65 to 150°C
200°C
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: sales@semelab.co.uk
Prelim. 01/01
D2004UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance *
V
GS
= 0
V
DS
= 28V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 10W
V
DS
= 28V
f = 1GHz
I
DQ
= 0.4A
I
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 0.4A
1
0.36
10
40
20:1
65
Typ.
Max. Unit
V
0.4
1
7
mA
m
A
V
S
dB
%
—
V
GS(th)
Gate Threshold Voltage *
TOTAL DEVICE
Common Source Power Gain
h
Drain Efficiency
VSWR Load Mismatch Tolerance
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
V
DS
= 0V
V
DS
= 28V
V
DS
= 28V
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
24
12
1
pF
pF
pF
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
£
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 3.0°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: sales@semelab.co.uk
Prelim. 01/01
D2004UK
3RXW
:
*DLQ
G%
3RXW
:
'UDLQ(IILFLHQF\
I
,GT
9GV
*+]
$
9
3LQ:
3RXW
*DLQ
I
,GT
9GV
3LQ:
*+]
$
9
3RXW
'UDLQ(IILFLHQF\
Figure 1
Output Power and Gain vs. Input Power
Figure 2
Output Power and Efficiency vs. Input Power.
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
1000MHZ
ZS
ZL
W
W
2.4 - j2.5
5 + j1
N.B.
Impedances measured terminal to terminal.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: sales@semelab.co.uk
Prelim. 01/01
D2004UK
1 0
+ 2 8 V
G a te -B ia s
1 K 2
1 0 0 n F
1 n F
1 K 2
1 K 2
L 1
D 2 0 0 4 U K
3 6 p F
T 3
T 2
1 -8 p F
T 1
1 -8 p F
2 .2 p F
1 0 p F
8 .2 p F
3 .6 p F
T 4
T 5
T 6
L 2
T 1 1
T 1 2
T 1 3
T 1 4
3 6 p F
1 -8 p F
3 6 p F
3 6 p F
T 7
T 8
T 9
T 1 0
D 2 0 0 4 U K
T 1 5
T 1 6
T 1 7
T 1 8
T 1 9
1 n F
L 3
1 0 0 n F
1 0 0 u F
1000MHz TEST FIXTURE
Substrate 0.8mm thick PTFE/glass
All microstrip lines W = 2.7mm
T1
T2, T19
T3, T7
T4, T8
T5, T9
T6, T10
T11,T15
T12,T16
T13,T17
T14,T18
L1,L2
L3
23 mm
50mm 50 OHM UT 34 semi-rigid coax
6mm
8mm
15mm
9mm
8mm
7mm
11mm
5mm
6 turns of 24swg enamelled copper wire, 3mm i.d.
1.5 turns of 24swg enamelled copper wire on Siemens B62152-a7x 2 hole core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: sales@semelab.co.uk
Prelim. 01/01
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