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DA4148A

Description
Rectifier Diode, 8 Element, 0.1A, 80V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size155KB,2 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric View All

DA4148A Overview

Rectifier Diode, 8 Element, 0.1A, 80V V(RRM), Silicon

DA4148A Parametric

Parameter NameAttribute value
package instructionR-PSIP-P9
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON ANODE, 8 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSIP-P9
Number of components8
Number of terminals9
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.025 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage20 V
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Base Number Matches1
DAN 803 / DAP 803 / DA4148A/K (200 mW)
Small Signal Diode Arrays
Dioden Sätze mit Allzweckdioden
Nominal power dissipation
Nenn-Verlustleistung
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
9 Pin-Plastic case
9 Pin-Kunststoffgehäuse
Weight approx. – Gewicht ca.
Dimensions / Maße in mm
200 mW
80 V
24 x 3.5 x 6.6 [mm]
0.6 g
Standard packaging bulk
Standard Lieferform lose im Karton
"DAP": common anodes / gemeinsame Anoden
"DA4148A": common anodes / gemeinsame Anoden
"DAN": common cathodes / gemeinsame Kathoden
"DA4148K" : common cathodes / gemeinsame Kathoden
Maximum ratings
Type
Typ
DAN 803 = DA 4148 K
DAP 803 = DA 4148 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
80
80
T
A
= 25
L
C
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
80
80
Max. average forward rectified current, R-load,
for one diode operation only
per diode for simultaneous operation
Dauergrenzstrom in Einwegschaltung mit R-Last,
für eine einzelne Diode
pro Diode bei gleichzeitigem Betrieb
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
1
I
FAV
I
FAV
I
FAV
I
FAV
I
FSM
100 mA
1
)
25 mA
1
)
100 mA
1
)
25 mA
1
)
500 mA
T
U
= 25
L
C
T
A
= 25
L
C
) Leads kept at ambient temperature at a distance of 3 mm from case
Anschlußdrähte in 3 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten
392
221101
© by SEMIKRON
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