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D2224UKG4

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, SOP-8
CategoryDiscrete semiconductor    The transistor   
File Size30KB,2 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric Compare View All

D2224UKG4 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, SOP-8

D2224UKG4 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-XDSO-G8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-XDSO-G8
JESD-609 codee4
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
TetraFET
D2224UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
A
N
8
D
1
2
C
B
P
7
6
5
3
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 7.2V – 850MHz
SINGLE ENDED
FEATURES
H
K
L
J
E
F
G
M
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
45°
0.20
2.18
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
29W
40V
±20V
8A
–65 to 150°C
200°C
Prelim. 5/99

D2224UKG4 Related Products

D2224UKG4
Description UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, SOP-8
Is it lead-free? Lead free
Is it Rohs certified? conform to
Parts packaging code SOT
package instruction SMALL OUTLINE, R-XDSO-G8
Contacts 8
Reach Compliance Code compliant
ECCN code EAR99
Other features LOW NOISE
Configuration SINGLE
Minimum drain-source breakdown voltage 40 V
Maximum drain current (ID) 8 A
FET technology METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code R-XDSO-G8
JESD-609 code e4
Number of components 1
Number of terminals 8
Operating mode ENHANCEMENT MODE
Maximum operating temperature 200 °C
Package body material UNSPECIFIED
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface GOLD
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications AMPLIFIER
Transistor component materials SILICON
Base Number Matches 1
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