D2029UK datasheet, PDF - EEWORLD Datasheet

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D2029UK: DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, F-0127, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size23KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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D2029UK Overview

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, F-0127, 8 PIN

D2029UK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	CERAMIC, F-0127, 8 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDSO-N8
JESD-609 code	e4
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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TetraFET

D2029UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

Dimensions in mm.

5.50 ± 0.15

1.27 ± 0.05

2 PL.

0.47

1.65

2 PL.

0.3 R.

4 PL.

2.313

± 0.2

3.00 2.07

0.381

2 PL. 2 PL.

1.27

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

2.5W – 28V – 1GHz

SINGLE ENDED

0.360

± 0.005

1.27

6.50 ±

0.15

0.47

2 PL.

0.80

4 PL.

4.90 ± 0.15

1.27

0.10 R.

TYP.

FEATURES

0.10

TYP.

0.508

0.10

TYP.

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

F-0127 PACKAGE

PIN 1 – SOURCE

PIN 2 – DRAIN

PIN 3 – DRAIN

PIN 4 – SOURCE

PIN 5 – SOURCE

PIN 6 – GATE

PIN 7 – GATE

PIN 8 – SOURCE

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

Ceramic Material: Alumina.

Parts can also be supplied with AlN or BeO for

improved thermal resistance.

Contact Semelab for details.

APPLICATIONS

•

HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 2 GHz

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSS

GSS

D(sat)

stg

Semelab plc.

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

Website

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

17.5W

65V

±20V

–65 to 150°C

200°C

Prelim. 2/99

D2029UK Related Products

	D2029UK	D2029UKG4
Description	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, F-0127, 8 PIN	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC, F-0127, 8 PIN
Is it Rohs certified?	conform to	conform to
package instruction	CERAMIC, F-0127, 8 PIN	CERAMIC, F-0127, 8 PIN
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	65 V	65 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDSO-N8	R-CDSO-N8
JESD-609 code	e4	e4
Number of components	1	1
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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