TetraFET
D2030UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15
1.27 ± 0.05
2 PL.
2 PL.
0.47
1.65
2 PL.
0.3 R.
4 PL.
2.313
± 0.2
4
3
3.00 2.07
0.381
2 PL. 2 PL.
5
1.27
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
SINGLE ENDED
0.360
± 0.005
6
1.27
6.50 ±
0.15
2
1
0.47
2 PL.
0.80
4 PL.
4.90 ± 0.15
7
1.27
8
0.10 R.
TYP.
FEATURES
0.10
TYP.
0.508
0.10
TYP.
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
F-0127 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage*
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
30W
65V
±20V
2A
–65 to 150°C
200°C
Prelim. 2/99
D2030UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
η
C
iss
C
oss
C
rss
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0
V
DS
= 28V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 5W
V
DS
= 28V
f = 1GHz
V
DS
= 0V
V
DS
= 28V
V
DS
= 28V
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
I
DQ
= 0.4A
I
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 0.4A
1
0.36
13
40
20:1
65
Typ.
Max. Unit
V
2
1
5
mA
µA
V
S
dB
%
—
24
12
1
pF
pF
pF
V
GS(th)
Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300
µs
, Duty Cycle
≤
2%
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 6°C / W
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Prelim. 2/99
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