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D8SB10

Description
Bridge Rectifier Diode, 8A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size58KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric View All

D8SB10 Overview

Bridge Rectifier Diode, 8A, 100V V(RRM),

D8SB10 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current175 A
Number of components4
Maximum operating temperature150 °C
Maximum output current8 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
D8SB10 – D8SB100
8A(SIP)
8A(SIP) BRIDGE RECTIFIERS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave,
60Hz,resistive or inductive load. For capacitive load,derate current by 20%.
Maximum
Peak
TYPE
Reverse
Voltage
PRV
V
PK
Maximum
Average
Forward
Output
Current
@T
A
=70°C
I
O
Maximum
Forward Peak
Surge Current
@ 8.3ms
Superimposed
I
FM
(Surge)
A
PK
Maximum DC
Forward Voltage
drop per element
at I
F
=4.0ADC
V
F
V
PK
Maximum DC
Reverse Current
at rated DC
Blocking Voltage
per element
I
R
25°CTA
µADC
125°CTA
µADC
Operating
Junction
Temperature
Package
Dimensions
T
J
°C
A
AV
D8SB10
D8SB20
D8SB40
D8SB60
D8SB80
D8SB100
100
200
400
600
800
1000
8
175
1.1
5
500
150
D8SB
φ
.142(3.6)
φ
.126(3.2)
C3
1.193(30.3)
1.169(29.7)
.189(4.8)
.173(4.4)
.160(3.8)
.134(3.4)
.779(20.3)
.775(19.7)
.779(20.3)
.776(19.7)
.098(2.5)
.079(2.0)
.043(1.1)
.036(0.9)
.197(5.0)
.441(11.2)
.425(10.8)
.789(18.0)
.669(17.0)
.142(3.6)
.126(3.2)
.709(18.0)
.669(17.0)
.405(10.3)
.382(9.7)
.303(7.7)
.287(7.3)
.032(0.8)
.024(0.6)
D8SB
21C–1/2

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