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DAF811K

Description
Rectifier Diode, 8 Element, 0.6A, 100V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size97KB,2 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric Compare View All

DAF811K Overview

Rectifier Diode, 8 Element, 0.6A, 100V V(RRM), Silicon

DAF811K Parametric

Parameter NameAttribute value
package instructionR-PSIP-P9
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON CATHODE, 8 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PSIP-P9
Number of components8
Number of terminals9
Maximum output current0.6 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Maximum power dissipation1.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.35 µs
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Base Number Matches1
DAF 811 A/K … DAF 814 A/K (1.2 W)
Fast Switching Rectifier Arrays
Schnelle Gleichrichter Sätze
Nominal power dissipation
Nenn-Verlustleistung
23
±0.2
4.5
2.6
1.2 W
100...400 V
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
9 Pin-Plastic case
9 Pin-Kunststoffgehäuse
Weight approx. – Gewicht ca.
Standard packaging bulk
Standard Lieferform lose im Karton
4.5
Ø 0.5
8 x 2.54
23 x 2.6 x 4.5 [mm]
0.6 g
Dimensions / Maße in mm
"DA 811 A...8110 A": com. anodes / gem. Anoden
"DA 811 K...8110 K" : com. cathodes / gem. Kathoden
Maximum ratings
Type
Typ
DAF 811 A/K
DAF 814 A/K
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
100
400
T
A
= 25
/
C
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
120
480
Max. average forward rectified current, R-load,
for one diode operation only
per diode for simultaneous operation
Dauergrenzstrom in Einwegschaltung mit R-Last,
für eine einzelne Diode
pro Diode bei gleichzeitigem Betrieb
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
I
FAV
I
FAV
I
FAV
I
FAV
I
FSM
600 mA
1
)
150 mA
1
)
600 mA
1
)
150 mA
1
)
30 A
T
U
= 25
/
C
T
A
= 25
/
C
1
) Leads kept at ambient temperature at a distance of 3 mm from case
Anschlußdrähte in 3 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten
020404
© by SEMIKRON
1

DAF811K Related Products

DAF811K DAF814K DAF814A
Description Rectifier Diode, 8 Element, 0.6A, 100V V(RRM), Silicon Rectifier Diode, 8 Element, 0.6A, 400V V(RRM), Silicon Rectifier Diode, 8 Element, 0.6A, 400V V(RRM), Silicon
package instruction R-PSIP-P9 R-PSIP-P9 R-PSIP-P9
Reach Compliance Code unknown unknown unknow
ECCN code EAR99 EAR99 EAR99
Configuration COMMON CATHODE, 8 ELEMENTS COMMON CATHODE, 8 ELEMENTS COMMON ANODE, 8 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PSIP-P9 R-PSIP-P9 R-PSIP-P9
Number of components 8 8 8
Number of terminals 9 9 9
Maximum output current 0.6 A 0.6 A 0.6 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Maximum power dissipation 1.2 W 1.2 W 1.2 W
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 400 V 400 V
Maximum reverse recovery time 0.35 µs 0.35 µs 0.35 µs
surface mount NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE
Base Number Matches 1 1 -

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