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DD253SR-LF

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size43KB,2 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

DD253SR-LF Overview

Rectifier Diode,

DD253SR-LF Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
Base Number Matches1
WTE
POWER SEMICONDUCTORS
DD250/S – DD256/S
Pb
25A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE
Features
Glass Passivated Die Construction
Low Leakage
Low Cost
High Surge Current Capability
Low Forward
C-Band Terminal Construction
C
Anode
+
D
Mechanical Data
B
Case: 8.4mm or 9.5mm Dish Type Press-Fit
with Silicon Rubber Sealed on Top
Terminals: Contact Areas Readily Solderable
Polarity: Cathode to Case (Reverse Units Are
Available Upon Request and Are Designated
By A “R” Suffix, i.e. DD250R or DD250SR)
Polarity: White Color Equals Standard,
Black Color Equals Reverse Polarity
Mounting Position: Any
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 2
A
8.4mm Dish
Min
Max
8.25
2.00
9.5mm Dish
Min
Max
9.70
2.40
20.50
24.50
Dim
A
B
C
D (+)*
D (-)*
8.45
9.30
2.40
2.00
1.50 Ø Typical
17.50
20.50
17.50
21.50
24.50
21.50
All Dimensions in mm
“S” Suffix Designates 8.4mm Dish
No Suffix Designates 9.5mm Dish
(+)*: Standard Polarity; (-)*: Reverse Polarity
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
C
= 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 25A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
@T
A
=25°C unless otherwise specified
DD250/ DD251/ DD252/ DD253/ DD254/ DD255/ DD256/
S
S
S
S
S
S
S
50
35
100
70
200
140
300
210
25
400
280
500
350
600
420
Unit
V
V
A
I
FSM
V
FM
I
RM
C
j
R
θJC
T
J
, T
STG
300
1.0
5.0
500
300
1.0
-65 to +175
A
V
µA
pF
°C/W
°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance: Junction to case, single side cooled.
DD250/S – DD256/S
1 of 2
© 2006 Won-Top Electronics
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