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DMA961030R

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI5-F4-B, SC-107BB, 5 PIN
CategoryDiscrete semiconductor    The transistor   
File Size626KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DMA961030R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI5-F4-B, SC-107BB, 5 PIN

DMA961030R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionHALOGEN FREE AND ROHS COMPLIANT, SSMINI5-F4-B, SC-107BB, 5 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F5
Number of components2
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.125 W
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DMA96103
Silicon PNP epitaxial planar type
For digital circuits
DMA56103 in SSMini5 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: G8
Basic Part Number
Dual DRA2144E (Common emitter)
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
Panasonic
JEITA
Code
(C1)
5
Tr1
R
2
R
1
R
2
R
1
Packaging
DMA961030R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard)
4: Collector (Tr2)
5: Collector (Tr1)
SSMini5-F4-B
SC-107BB
SOT-665
(C2)
4
Tr2
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Tr1
Tr2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Overall
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
opr
T
stg
Rating
–50
–50
–100
125
150
–40 to +85
–55 to +150
Unit
V
V
mA
mW
°C
°C
°C
1
(B1)
2
(E)
3
(B2)
Resistance value
R
1
R
2
Typ
Max
47
47
Unit
V
V
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –10 V, I
C
= –5 mA
I
C
= –10 mA, I
B
= – 0.5 mA
V
CE
= – 0.2 V, I
C
= –5 mA
V
CE
= –5 V, I
C
= –100 µA
–30%
0.8
47
1.0
–3.6
– 0.8
+30%
1.2
80
– 0.25
Min
–50
–50
– 0.1
– 0.5
– 0.1
µA
µA
mA
V
V
V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2013
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