This product complies with the RoHS Directive (EU 2002/95/EC).
DMG26412
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
Features
Package
Code
Mini6-G4-B
Name
Pin
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
DRC2543E + DRA2543E (Individual)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: S9
Internal Connection
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Tr1
Collector-emitter voltage (Base open)
Collector current
Collector-base voltage (Emitter open)
Tr2
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
500
–50
–50
–500
300
150
–55 to +150
Unit
V
V
mA
V
V
mA
mW
°C
°C
(C1)
6
Tr1
(B2)
5
R
1
R
2
R
2
(E2)
4
R
1
Tr2
1
(E1)
2
(B1)
3
(C2)
Resistance
value
Tr1
Tr2
R
1
R
2
R
1
R
2
4.7
4.7
4.7
4.7
kΩ
kΩ
Electrical Characteristics
T
a
= 25°C±3°C
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 100 mA
I
C
= 100 mA, I
B
= 5 mA
V
CE
= 0.2 V, I
C
= 50 mA
V
CE
= 5 V, I
C
= 100 µA
–30%
0.8
4.7
1.0
3.6
0.7
+30%
1.2
50
0.25
Min
50
50
1
1
2
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2010
ZJJ00753AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMG26412
Electrical Characteristics (Continued)
T
a
= 25°C±3°C
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Common characteristics chart
DMG26412_PT-Ta
P
T
T
a
350
300
250
200
150
100
50
0
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –10 V, I
C
= –100 mA
I
C
= –100 mA, I
B
= – 5 mA
V
CE
= – 0.2 V, I
C
= –50 mA
V
CE
= –5 V, I
C
= –100 µA
Min
–50
–50
Typ
Max
Unit
V
V
–1
–1
–2
50
– 0.25
–3.6
– 0.7
–30%
0.8
4.7
1.0
+30%
1.2
µA
µA
mA
V
V
V
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Total power dissipation P
T
(mW)
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
Characteristics charts of Tr1
DMG26412(Tr1)_IC-VCE
I
C
V
CE
250
T
a
=
25°C
300
DMG26412(Tr1)_hFE-IC
DMG26412(Tr1)_VCEsat-IC
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
V
CE
=
10 V
T
a
=
85°C
25°C
200
150
100
50
0
−30°C
V
CE(sat)
I
C
I
C
/ I
B
= 20
Collector current I
C
(mA)
200
I
B
=
900
µA
800
µA
Forward current transfer ratio h
FE
250
150
700
µA
600
µA
1
100
500
µA
400
µA
0.1
50
300
µA
200
µA
100
µA
0
2
4
6
8
10
12
T
a
=
85°C
−30°C
25°C
1
10
10
2
10
3
0
1
10
10
2
10
3
0.01
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
2
ZJJ00753AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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