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DMG96303

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI5-F4-B, 5 PIN
CategoryDiscrete semiconductor    The transistor   
File Size639KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
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DMG96303 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI5-F4-B, 5 PIN

DMG96303 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts5
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationCOMPLEX
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F5
Number of components2
Number of terminals5
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN AND PNP
Maximum power dissipation(Abs)0.125 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMG96303
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
Features
Package
Code
SSMini5-F4-B
Name
Pin
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
DRC2144E + DRA2144E (Collector-base connection)
4: Collecter (Tr2)
5: Base (Tr2)
Collecter (Tr1)
Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
Marking Symbol: GA
Internal Connection
Unit
V
V
mA
V
V
mA
mW
°C
°C
Resistance
value
Tr1
Tr2
1
(E1)
(B2, C1)
5
Tr1
R
2
R
1
R
2
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Tr1
Collector-emitter voltage (Base open)
Collector current
Collector-base voltage (Emitter open)
Tr2
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
–50
–50
–100
125
150
–55 to +150
(C2)
4
Tr2
R
1
2
(B1)
3
(E2)
R
1
R
2
R
1
R
2
47
47
47
47
Electrical Characteristics
T
a
= 25°C±3°C
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
–30%
0.8
47
1.0
3.6
0.8
+30%
1.2
80
0.25
Min
50
50
0.1
0.5
0.1
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2010
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