DTD/TFD120/200
DTD/TFD120/200
Superswitch Powerline NPN Darlington Transistor
Replaces November 1999 version, DS5265-2.0
DS5265-3.0 September 2000
APPLICATIONS
s
s
s
s
High frequency inverters
Power supplies
Aircraft power supplies
Motor controls
KEY PARAMETERS
V
CEO(SUS)
450V
600V
V
CEX
I
C(CONT)
120/200A
200/300A
I
C(PK)
t
f
2.0
µ
s
FEATURES
s
s
s
s
s
s
Monolithic darlington
Triple diffused
High power capability
Thermal fatigue free compression bonded structure
Fast switching, speed up diode
Hermetic high mount down packing density and
convenient bolt down packages
C
B
Package outline
type code: E
E
Package outline
type code: TFD
See Package Details for information.
Fig.2 Package outlines
Fig.1 Darlington circuit configuration
RATINGS
Symbol
V
CEX
V
EBO
I
C(CONT)
I
B(CONT)
I
C(PK)
P
tot
Parameter
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Continuous base current
Peak collector current
Power dissipation
Test Conditions
-
-
-
-
-
T
case
= 25
o
C
DTD/TFD120
600
5
120
4
200
1.5
DTD/TFD200
600
5
200
4
300
1.5
Units
V
V
A
A
A
kW
1/10
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DTD/TFD120/200
ON-STATE CHARACTERISTICS
Measured under pulse conditions T
case
= 25
o
C
Symbol
V
CE(SAT)
Parameter
Collector-emitter
saturation voltage
Emitter-base saturation
voltage
Test Conditions
I
C
= 120A, I
B
= 2.4A
I
C
= 200A, I
B
= 4.0A
I
C
= 120A, I
B
= 2.4A
I
C
= 200A, I
B
= 4.0A
I
C
= 120A, V
CE
= 5V
I
C
= 200A, V
CE
= 5V
DTD/TFD120 DTD/TFD200
Min Typ Max Min Typ Max Units
-
-
-
-
-
-
-
-
2.0
-
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
-
2.5
-
-
V
V
V
V
-
-
V
BE(SAT)
150 -
-
-
h
FE
DC current gain
- 150 -
OFF-STATE CHARACTERISTICS
T
case
= 25
o
C
Symbol
V
CEO(SUS)
I
CBO
I
EBO
Parameter
Collector-emitter
saturation voltage
I
C
= 0.5A
Test Conditions
DTD/TFD120 DTD/TFD200
Min Typ Max Min Typ Max Units
450 -
-
-
- 450 -
5.0
-
-
-
5.0
V
mA
mA
Collector cut-off current V
CB
= 600V, I
E
= 0
Emitter cut-off current
V
EB
= 10V
- 120 400
- 120 400
Note: V
CEO(SUS)
must not be measured on a curve tracer.
SWITCHING CHARACTERISTICS
T
case
= 25
o
C
Symbol
t
on
t
gs
t
f
Parameter
Turn-on time
Storage time
Fall time
Test Conditions
DTD/TFD120
DTD/TFD120 DTD/TFD200
Max
1.0
10
2.0
Max
1.0
10
2.0
Units
µs
µs
µs
I
C
= 120A, I
B1
= I
B2
= 2.4A, V
CE
= 300V
DTD/TFD200
I
C
= 200A, I
B1
= I
B2
= 4.0A, V
CE
= 300V
2/10
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DTD/TFD120/200
THERMAL RATINGS AND MECHANICAL DATA - DELTA OUTLINE ONLY
Symbol
Parameter
Thermal resistance junction to case
Contact thermal resistance
Virtual junction temperature
Operating and storage temperature
range
Mounting torque
Test Conditions
-
Mounting torque 16Kg/cm
-
-
Max.
0.06
0.036
150
-55 to +150
16.0
Units
˚C/W
˚C/W
˚C
˚C
Nm
R
th(j-c)
R
th(c-hs)
T
vj
T
op
/T
stg
-
THERMAL RATINGS AND MECHANICAL DATA - E OUTLINE ONLY
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
dc
Emitter
or collector
Double side
Min.
-
-
-
-
-
-55
3.0
Max.
0.08
-
0.036
-
150
+150
4.0
Units
o
C/W
o
C/W
C/W
o
R
th(c-h)
T
vj
T
op
/T
sto
-
Thermal resistance - case to heatsink
Virtual junction temperature
Operating and storage temperature
range
Clamping force
Clamping force 3.5kN
with mounting compound Single side
On-state (conducting)
o
C/W
o
C
C
o
kN
3/10
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DTD/TFD120/200
CURVES
1000
T
case
= 25˚C
V
CE
= 5V
DC Current gain - h
FE
V
CE
= 2V
100
10
1
10
100
Collector current I
C
- (A)
Fig.3 Typical DC forward current transfer ratio @ 25˚C
1000
10000
T
case
= 125˚C
DC Current gain - h
FE
1000
V
CE
= 5V
V
CE
= 2V
100
10
1
10
100
Collector current I
C
- (A)
Fig.4 Typical DC forward current transfer ratio @ 125˚C
1000
4/10
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DTD/TFD120/200
Collector - emitter saturation voltage V
CE(SAT)
- (V)
10
T
case
= 25˚C
8
I
C
/I
B
= 100
I
C
/I
B
= 200
6
4
I
C
/I
B
= 50
2
0
1
10
100
Collector current I
C
- (A)
Fig.5 Typical V
CE(SAT)
vs collector current
1000
Base - emitter saturation voltage V
BE(SAT)
- (V)
4
T
case
= 25˚C
3
2
I
C
/I
B
= 50
1
I
C
/I
B
= 100
0
1
10
100
Collector current I
C
- (A)
Fig.6 Typical V
BE(SAT)
vs collector current
1000
5/10
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