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DRA4124T0A

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, NS-B2-B-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size268KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

DRA4124T0A Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, NS-B2-B-B, 3 PIN

DRA4124T0A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DRA4124T
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC4124T
DRA2124T in NS through hole type package
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, mount area reduction
Eco-friendly Halogen-free package
Package
Code
NS-B2-B-B
Package dimension clicks here.→
Click!
Packaging
DRA4124T0A Radial type: 5000 pcs / carton
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
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Rating
–50
–50
300
Unit
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
–100
150
mA
°C
°C
B
Name
Pin
1: Emitter
2: Collector
3: Base
Marking Symbol: LH
Internal Connection
R
1
C
mW
E
T
stg
–55 to +150
Resistance value
R
1
22
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Ma
int
en
Collector-base cutoff current (Emitter open)
an
ce
Collector-emitter voltage (Base open)
/D
Collector-base voltage (Emitter open)
isc
on
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
tin
Electrical Characteristics
T
a
= 25°C±3°C
ue
di
Conditions
Min
–50
–50
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
– 0.1
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
– 0.5
460
– 0.01
Pl
V
CE
= –10 V, I
C
= –5 mA
160
I
C
= –10 mA, I
B
= – 0.5 mA
V
CE
= – 0.2 V, I
C
= –5 mA
V
CE
= –5 V, I
C
= –100 µA
–30%
22
–1.8
– 0.25
– 0.4
+30%
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2012
Ver. AED
1
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