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DRC4114W0A

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, NS-B2-B-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size270KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DRC4114W0A Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, NS-B2-B-B, 3 PIN

DRC4114W0A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 0.47
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)20
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DRC4114W
Silicon NPN epitaxial planar type
For digital circuits
DRC2114W in NS through hole type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, mount area reduction
Eco-friendly Halogen-free package
Package
Code
NS-B2-B-B
Package dimension clicks here.→
Click!
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
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T
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Rating
50
50
Unit
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
Packaging
DRC4114W0A Radial type : 5000 pcs / carton
100
300
150
mA
°C
°C
mW
B
Name
Pin
1: Emitter
2: Collector
3: Base
Marking Symbol: N9
Internal Connection
R
1
C
R
2
E
–55 to +150
Resistance value
R
1
R
2
10
4.7
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
on
tin
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
ue
Symbol
di
Conditions
Min
50
50
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
Forward current transfer ratio
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Ma
int
en
Emitter-base cutoff current (Collector open)
Collector-emitter saturation voltage
an
Collector-emitter cutoff current (Base open)
ce
/D
Collector-base cutoff current (Emitter open)
isc
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
0.1
0.5
1.0
V
CE
= 10 V, I
C
= 5 mA
20
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
0.25
1.3
Pl
3.0
–30%
1.70
10.0
2.13
+30%
2.60
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2012
Ver. AED
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