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DTC143ERL

Description
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size172KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

DTC143ERL Overview

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN, BIP General Purpose Small Signal

DTC143ERL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1, EUROPEAN PART NUMBER
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DTC114E Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
http://onsemi.com
NPN SILICON
BIAS RESISTOR
TRANSISTOR
PIN 3
COLLECTOR
(OUTPUT)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C (Note 1.)
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
P
D
350
2.81
mW
mW/°C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
PIN 2
BASE
(INPUT)
R1
R2
PIN 1
EMITTER
(GROUND)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient (surface mounted)
Operating and Storage
Temperature Range
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
Symbol
R
θJA
T
J
, T
stg
T
L
260
10
Value
357
–55 to
+150
Unit
°C/W
°C
1
2
3
°C
Sec
CASE 29
TO–92 (TO–226)
STYLE 1
DEVICE MARKING AND RESISTOR VALUES
Device
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
Marking
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
R2 (K)
10
22
47
47
1.0
2.2
4.7
47
Shipping
5000/Box
DTC1xxx
YWW
MARKING DIAGRAM
DTC1
xxx
Y
WW
= Specific Device Code
= (See Table)
= Year
= Work Week
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2001
402
January, 2001 – Rev. 2
Publication Order Number:
DTC114E/D

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