DTC114TZL1 datasheet, PDF - EEWORLD Datasheet

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DTC114TZL1: DescriptionTRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size172KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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DTC114TZL1 Overview

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN, BIP General Purpose Small Signal

DTC114TZL1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	EUROPEAN PART NUMBER
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	160
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DTC114E Series

Preferred Devices

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the TO–92

package which is designed for through hole applications.

http://onsemi.com

NPN SILICON

BIAS RESISTOR

TRANSISTOR

PIN 3

COLLECTOR

(OUTPUT)

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Power Dissipation

@ T

= 25°C (Note 1.)

Derate above 25°C

Symbol

CBO

CEO

350

2.81

mW/°C

Value

100

Unit

Vdc

mAdc

PIN 2

BASE

(INPUT)

PIN 1

EMITTER

(GROUND)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to

Ambient (surface mounted)

Operating and Storage

Temperature Range

Maximum Temperature for

Soldering Purposes,

Time in Solder Bath

Symbol

θJA

, T

stg

260

Value

357

–55 to

+150

Unit

°C/W

°C

Sec

CASE 29

TO–92 (TO–226)

STYLE 1

DEVICE MARKING AND RESISTOR VALUES

Device

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

Marking

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

R1 (K)

4.7

1.0

2.2

4.7

R2 (K)

∞

1.0

2.2

4.7

Shipping

5000/Box

DTC1xxx

YWW

MARKING DIAGRAM

DTC1

xxx

= Specific Device Code

= (See Table)

= Year

= Work Week

1. Device mounted on a FR–4 glass epoxy printed circuit board using the

minimum recommended footprint.

Preferred

devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

402

January, 2001 – Rev. 2

Publication Order Number:

DTC114E/D

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