DT92N14KOC datasheet, PDF - EEWORLD Datasheet

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DT92N14KOC: DescriptionSilicon Controlled Rectifier, 160A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,; CategoryAnalog mixed-signal IC Trigger device; File Size321KB，12 Pages; ManufacturerEUPEC [eupec GmbH]

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DT92N14KOC Overview

Silicon Controlled Rectifier, 160A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,

DT92N14KOC Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN SERIES DIODE
Maximum DC gate trigger current	120 mA
JESD-30 code	R-PUFM-X5
Number of components	1
Number of terminals	5
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum rms on-state current	160 A
Off-state repetitive peak voltage	1400 V
Repeated peak reverse voltage	1400 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Trigger device type	SCR
Base Number Matches	1

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Netz-Thyristor-Modul

Phase Control Thyristor Modul

Datenblatt / Data sheet

TT92N

Kenndaten

TD92N

TT92N..K..-A

TD92N..K..-A

DT92N..K..-K

DRM

RRM

1000

1400

DSM

RSM

TRMSM

= 85°C

= 76°C

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

6.Kennbuchstabe / 6

letter C

6.Kennbuchstabe / 6

letter F

TAVM

TSM

I²t

(di

/dt)

(dv

/dt)

1000

1400

1100

1500

1200 V

1600 V

1200 V

1600 V

1300 V

1700 V

160 A

92 A

104 A

2050 A

1800 A

21000 A²s

16200 A²s

150 A/µs

TT92N..K..-K

NT92N

DT92N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

repetitive peak forward off-state and reverse voltages

Elektrische Eigenschaften

Vorwärts-Stoßspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stoßspitzensperrspannung

non-repetitive peak reverse voltage

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

= -40°C... T

vj max

= +25°C... T

vj max

500 V/µs

1000 V/µs

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= T

vj max

, i

= 300 A

= T

vj max

= T

vj max

= 25°C, v

= 6 V

= 25°C, v

= 6 V

= T

vj max

, v

= 6 V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 6 V, R

= 5

Ω

(TO)

max.

1,62 V

0,85 V

2,15 mΩ

max.

120 mA

1,4 V

5,0 mA

2,5 mA

0,2 V

200 mA

620 mA

25 mA

3 µs

= 25°C, v

= 6 V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

DIN IEC 747-6

= 25 °C,i

= 1 A, di

/dt = 1 A/µs

, i

prepared by: C.Drilling

approved by: J. Novotny

date of publication:

revision:

18.12.01

BIP AC

Seite / page A 14/92

Seite/page

1/12

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