OPA
433
6
OPA
336
OPA
233
6
OPA336
OPA2336
OPA4336
SBOS068C – JANUARY 1997 – REVISED JANUARY 2005
SINGLE-SUPPLY,
micro
Power
CMOS OPERATIONAL AMPLIFIERS
micro
Amplifier
™
Series
FEATURES
q
SINGLE-SUPPLY OPERATION
q
q
q
q
q
q
RAIL-TO-RAIL OUTPUT (within 3mV)
micro
POWER: I
Q
= 20
µ
A/Amplifier
micro
SIZE PACKAGES
LOW OFFSET VOLTAGE: 125
µ
V max
SPECIFIED FROM V
S
= 2.3V to 5.5V
SINGLE, DUAL, AND QUAD VERSIONS
DESCRIPTION
OPA336 series
microPower
CMOS operational amplifiers
are designed for battery-powered applications. They
operate on a single supply with operation as low as 2.1V.
The output is rail-to-rail and swings to within 3mV of the
supplies with a 100kΩ load. The common-mode range
extends to the negative supply—ideal for single-supply
applications. Single, dual, and quad versions have identical
specifications for maximum design flexibility.
In addition to small size and low quiescent current
(20µA/amplifier), they feature low offset voltage
(125µV max), low input bias current (1pA), and high open-
loop gain (115dB). Dual and quad designs feature
completely independent circuitry for lowest crosstalk and
freedom from interaction.
OPA336 packages are the tiny SOT23-5 surface mount
and SO-8 surface-mount. OPA2336 come in the miniature
MSOP-8 surface-mount, SO-8 surface-mount, and DIP-8
packages. The OPA4336 package is the space-saving
SSOP-16 surface-mount. All are specified from
–40°C to +85°C and operate from –55°C to +125°C.
A macromodel is available for download (at www.ti.com)
for design analysis.
5
V+
APPLICATIONS
q
q
q
q
q
q
q
BATTERY-POWERED INSTRUMENTS
PORTABLE DEVICES
HIGH-IMPEDANCE APPLICATIONS
PHOTODIODE PRE-AMPS
PRECISION INTEGRATORS
MEDICAL INSTRUMENTS
TEST EQUIPMENT
OPA336
Out
V–
+In
1
2
OPA4336
Out A
1
2
A
D
14
13
12
B
–In B
Out B
NC
6
7
8
SSOP-16
NC = No Connection
C
11
10
9
–In C
Out C
NC
+In D
V–
+In C
3
4
5
16
15
Out D
–In D
3
4
–In
–In A
OPA336
NC
–In
+In
V–
1
2
3
4
SO-8
NC = No Connection
8
7
6
5
NC
V+
Output
NC
SOT23-5
OPA2336
Out A
–In A
+In A
V–
1
2
3
4
DIP-8, SO-8, MSOP-8
A
B
8
7
6
5
V+
Out B
–In B
+In B
+In A
V+
+In B
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1997-2005, Texas Instruments Incorporated
www.ti.com
PACKAGE/ORDERING INFORMATION
(1)
PACKAGE
DRAWING
DESIGNATOR
DBV
DBV
DBV
D
D
D
DGK
DGK
P
P
D
D
DBQ
PACKAGE
MARKING
A36
(2)
A36
(2)
J36
OPA336U
OPA336UA
OPA336UJ
B36
(2)
B36
(2)
OPA2336P
OPA2336PA
OPA2336U
OPA2336UA
OPA4336EA
PRODUCT
Single
OPA336N
OPA336NA
OPA336NJ
OPA336U
OPA336UA
OPA336UJ
Dual
OPA2336E
OPA2336EA
OPA2336P
OPA2336PA
OPA2336U
OPA2336UA
Quad
OPA4336EA
PACKAGE-LEAD
SOT23-5
SOT23-5
SOT23-5
SO-8 Surface-Mount
SO-8 Surface-Mount
SO-8 Surface-Mount
MSOP-8 Surface-Mount
MSOP-8 Surface-Mount
DIP-8
DIP-8
SO-8 Surface-Mount
SO-8 Surface-Mount
SSOP-16 Surface-Mount
NOTES: (1) For the most current package and ordering information, see the package option addendum at the end of this data sheet. (2) Grade will be marked on
the Reel.
ABSOLUTE MAXIMUM RATINGS
(1)
Supply Voltage ................................................................................... 7.5V
Signal Input Terminals, Voltage
(2)
..................... (V–) –0.3V to (V+) +0.3V
Current
(2)
.................................................... 10mA
(3)
.............................................................. Continuous
Output Short-Circuit
Operating Temperature .................................................. –55°C to +125°C
Storage Temperature ..................................................... –55°C to +125°C
Junction Temperature ...................................................................... 150°C
Lead Temperature (soldering, 10s) ................................................. 300°C
ESD Rating:
Charged Device Model, OPA336 NJ and UJ only (CDM)
(4)
....... 1000V
Human Body Model (HBM)
(4)
......................................................... 500V
Machine Model (MM)
(4)
.................................................................. 100V
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only. Functional opera-
tion of the device at these conditions, or beyond the specified operating
conditions, is not implied. (2) Input terminals are diode-clamped to the power
supply rails. Input signals that can swing more than 0.3V beyond the supply
rails should be current-limited to 10mA or less. (3) Short-circuit to ground,
one amplifier per package. (4) OPA336 NJ and UJ have been tested to CDM
of 1000V. All other previous package versions have been tested using HBM
and MM. Results are shown.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper han-
dling and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
2
OPA336, 2336, 4336
www.ti.com
SBOS068C
ELECTRICAL CHARACTERISTICS: V
S
= 2.3V to 5.5V
Boldface
limits apply over the specified temperature range,
T
A
= –40
°
C to +85
°
C
.
At T
A
= +25°C, V
S
= +5V, and R
L
= 25kΩ connected to V
S
/2, unless otherwise noted.
OPA336NA, UA
OPA2336EA, PA, UA
OPA4336EA
MIN
TYP
T
D
T
T
±10
±10
T
T
T
T
T
(V+) –1
90
T
76
74
T
86
T
76
74
T
D
T
MAX
±500
T
D
T
D
OPA336N, U
OPA2336E, P, U
PARAMETER
OFFSET VOLTAGE
Input Offset Voltage
vs Temperature
vs Power Supply
Over Temperature
Channel Separation, dc
INPUT BIAS CURRENT
Input Bias Current
Over Temperature
Input Offset Current
V
OS
dV
OS
/dT
PSRR
CONDITION
MIN
TYP
(1)
±60
25
0.1
I
B
I
OS
±1
±1
3
40
30
–0.2
80
76
MAX
±125
100
130
OPA336NJ, UJ
MIN
TYP MAX UNITS
±500 ±2500
µV
D
µV/°C
T
T
µV/V
D
µV/V
T
µV/V
T
T
T
T
T
T
86
T
D
T
pA
pA
pA
µVp-p
nV/√Hz
fA/√Hz
V
dB
dB
Ω
|| pF
Ω
|| pF
dB
dB
dB
dB
kHz
V/µs
µs
mV
mV
mV
mV
mV
mA
pF
V
V
µA
µA
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
±
1.5
V
S
= 2.3V to 5.5V
V
S
= 2.3V to 5.5V
±
60
NOISE
Input Voltage Noise, f = 0.1 to 10Hz
Input Voltage Noise Density, f = 1kHz e
n
Current Noise Density, f = 1kHz
i
n
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
Common-Mode Rejection Ratio
Over Temperature
INPUT IMPEDANCE
Differential
Common-Mode
OPEN-LOOP GAIN
Open-Loop Voltage Gain
Over Temperature
Over Temperature
FREQUENCY RESPONSE
Gain-Bandwidth Product
Slew Rate
Overload Recovery Time
OUTPUT
Voltage Output Swing from Rail
(2)
Over Temperature
Over Temperature
Short-Circuit Current
Capacitive Load Drive
POWER SUPPLY
Specified Voltage Range
Minimum Operating Voltage
Quiescent Current (per amplifier)
Over Temperature
TEMPERATURE RANGE
Specified Range
Operating Range
Storage Range
Thermal Resistance
SOT-23-5 Surface-Mount
MSOP-8 Surface-Mount
SO-8 Surface-Mount
DIP-8
SSOP-16 Surface-Mount
DIP-14
A
OL
R
L
= 25kΩ, 100mV < V
O
< (V+) – 100mV
R
L
= 25kΩ, 100mV < V
O
< (V+) – 100mV
R
L
= 5kΩ, 500mV < V
O
< (V+) – 500mV
R
L
= 5kΩ, 500mV < V
O
< (V+) – 500mV
GBW
SR
V
S
= 5V, G = 1
V
S
= 5V, G = 1
V
IN
• G = V
S
R
L
= 100kΩ, A
OL
≥
70dB
R
L
= 25kΩ, A
OL
≥
90dB
R
L
= 25kΩ, A
OL
≥
90dB
R
L
= 5kΩ, A
OL
≥
90dB
R
L
= 5kΩ, A
OL
≥
90dB
I
SC
C
LOAD
V
S
I
Q
I
O
= 0
I
O
= 0
–40
–55
–55
θ
JA
2.3
100
100
90
90
V
CM
CMRR
–0.2V < V
CM
< (V+) –1V
–0.2V < V
CM
< (V+) –1V
10
13
|| 2
10
13
|| 4
115
106
90
90
T
D
T
T
T
T
90
90
T
D
T
T
T
T
100
0.03
100
3
20
70
±5
See Text
5.5
2.1
20
32
36
+85
+125
+125
200
150
150
100
100
80
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
D
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
23
38
42
T
T
T
T
T
100
100
500
500
T
D
T
D
T
D
T
D
TSpecifications
same as OPA2336E, P, U.
NOTES: (1) V
S
= +5V. (2) Output voltage swings are measured between the output and positive and negative power-supply rails.
OPA336, 2336, 4336
SBOS068C
www.ti.com
3
TYPICAL CHARACTERISTICS
At T
A
= +25°C, V
S
= +5V, and R
L
= 25kΩ connected to V
S
/2, unless otherwise noted.
OPEN-LOOP GAIN/PHASE vs FREQUENCY
100
80
G
0
–45
POWER-SUPPLY and COMMON-MODE
REJECTION RATIO vs FREQUENCY
100
CMRR
80
PSRR, CMRR (dB)
Voltage Gain (dB)
60
40
20
0
–20
1
10
100
1k
Frequency (Hz)
10k
100k
1M
Phase (°)
60
PSRR
40
Φ
–90
–135
–180
20
0
1
10
100
1k
10k
100k
Frequency (Hz)
QUIESCENT CURRENT vs SUPPLY VOLTAGE
30
Per Amplifier
QUIESCENT CURRENT vs TEMPERATURE
30
25
Per Amplifier
V
S
= +5V
Quiescent Current (µA)
25
Quiescent Current (µA)
20
15
10
5
V
S
= +2.3V
20
15
10
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Supply Voltage (V)
0
–75
–50
–25
0
25
50
75
100
125
Temperature (°C)
SHORT-CIRCUIT CURRENT vs SUPPLY VOLTAGE
±6
±5
±4
±3
±2
–I
SC
±1
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Supply Voltage (V)
+I
SC
8
7
Short-Circuit Current (mA)
6
SHORT-CIRCUIT CURRENT vs TEMPERATURE
Short-Circuit Current (mA)
V
S
= +5V
–I
SC
5
4
3
2
1
0
–75
–50
–25
0
25
50
75
100
125
Temperature (°C)
+I
SC
V
S
= +2.3V
–I
SC
+I
SC
4
OPA336, 2336, 4336
www.ti.com
SBOS068C
TYPICAL CHARACTERISTICS
(Cont.)
At T
A
= +25°C, V
S
= +5V, and R
L
= 25kΩ connected to V
S
/2, unless otherwise noted.
INPUT VOLTAGE AND CURRENT NOISE
SPECTRAL DENSITY vs FREQUENCY
1k
Voltage Noise
Voltage Noise (nV/√Hz)
Current Noise (fA/√Hz)
CHANNEL SEPARATION vs FREQUENCY
1k
150
Channel Separation (dB)
140
100
100
130
Dual and Quad devices, G = 1, all
channels. Quad measured channel A
to D or B to C—other combinations
yield improved rejection.
100
1k
Frequency (Hz)
10k
100k
10
10
120
Current Noise
1
1
10
100
1k
10k
100k
Frequency (Hz)
110
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
6
5
V
S
= +5.5V
120
A
OL
, CMRR, PSRR vs TEMPERATURE
A
OL
4
3
V
S
= +2.3V
2
1
0
100
1k
Frequency (Hz)
10k
100k
A
OL
, CMRR, PSRR (dB)
110
Output Voltage (Vp-p)
100
PSRR
90
CMRR
80
70
–75
–50
–25
0
25
50
75
100
125
Temperature (°C)
OFFSET VOLTAGE
PRODUCTION DISTRIBUTION
25
Typical production
distribution of
packaged units.
25
OFFSET VOLTAGE DRIFT MAGNITUDE
PRODUCTION DISTRIBUTION
Typical production
distribution of
packaged units.
Percent of Amplifiers (%)
15
Percent of Amplifiers (%)
20
20
15
10
10
5
0.1% 0.3%
0.2% 0.1%
5
0
–500
–400
–300
–200
–100
0
100
200
300
400
500
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
Offset Voltage (µV)
Offset Voltage Drift (µV/°C)
OPA336, 2336, 4336
SBOS068C
www.ti.com
5
京公网安备 11010802033920号
EEWORLD
