DPG30I400HA
HiPerFRED²
V
RRM
I
FAV
t
rr
=
=
=
400 V
30 A
45 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG30I400HA
Backside: cathode
3
1
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-247
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
© 2013 IXYS all rights reserved
DPG30I400HA
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.76
10.7
0.95
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 200 V f = 1 MHz
I
F
=
30 A; V
R
= 270 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 125°C
-di
F
/dt = 200 A/µs
32
4
8.5
45
85
160
360
V
mΩ
K/W
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max.
400
400
1
0.2
1.41
1.69
1.13
1.46
30
Unit
V
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 400 V
V
R
= 400 V
I
F
=
I
F
=
I
F
=
I
F
=
30 A
60 A
30 A
60 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 135°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
© 2013 IXYS all rights reserved
DPG30I400HA
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
F
C
mounting torque
mounting force with clip
TO-247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
50
175
150
150
Unit
A
°C
°C
°C
g
Nm
N
6
0.8
20
1.2
120
Product Marking
Part number
D
P
G
30
I
400
HA
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-247AD (2)
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
XXXXXXXXX
Zyyww
abcd
Ordering
Standard
Part Number
DPG30I400HA
Marking on Product
DPG30I400HA
Delivery Mode
Tube
Quantity
30
Code No.
507320
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.76
8.1
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
© 2013 IXYS all rights reserved
DPG30I400HA
Outlines TO-247
E
Q
A
A2
S
D1
D
2x
E2
Ø
P
Ø
P1
D2
Sym.
Inches
min.
max.
Millimeter
min.
max.
4
1
L1
L
2
3
E1
2x
b2
2x
b
C
A1
e
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.430 BSC
0.780 0.800
-
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
-
0.020 0.053
0.530
-
-
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
10.92 BSC
19.80 20.30
-
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
-
0.51
1.35
13.45
-
-
7.39
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
© 2013 IXYS all rights reserved
DPG30I400HA
Fast Diode
80
70
60
50
0.8
30 A
1.0
T
VJ
= 125°C
V
R
= 270 V
60 A
T
VJ
= 125°C
20
V = 270 V
R
60 A
30 A
15 A
16
I
F
T
VJ
= 150°C
40
Q
rr
0.6
15 A
I
RR
12
[A]
30
20
25°C
10
[μC]
0.4
[A]
8
0.2
0.0
0.4
0.8
1.2
1.6
2.0
0
200
400
600
4
0
200
400
600
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
-di
F
/dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
-diF /dt [A/μs]
Fig. 3 Typ. reverse recovery current
I
RR
versus -di
F
/dt
700
600
500
t
fr
16
V
FR
14
12
10
1.6
1.4
140
T
VJ
= 125°C
V
R
= 270 V
120
1.2
1.0
100
T
VJ
= 125°C
V
R
= 270 V
I
F
= 30 A
Kf
0.8
0.6
0.4
0.2
0.0
0
40
80
120
160
Q
rr
I
RR
t
rr
t
fr
400
[ns]
300
15 A
30 A
60 A
V
FR
8
[ns]
80
[V]
200
100
0
0
200
400
600
0
200
400
6
4
2
600
60
40
T
VJ
[°C]
Fig. 4 Typ. dynamic parameters
Q
rr
, I
RR
versus T
VJ
50
T
VJ
= 125°C
V
R
= 270 V
40
1.0
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
t
rr
versus -di
F
/dt
-di
F
/dt [A/μs]
Fig. 6 Typ. forward recov. voltage
V
FR
& time t
fr
versus di
F
/dt
60 A
30 A
0.8
30
15 A
Z
thJC
0.6
[K/W]
0.4
E
rec
20
[μJ]
10
0.2
0
0
200
400
600
0.0
1
10
100
1000
1000 0
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
IXYS reserves the right to change limits, conditions and dimensions.
t [ms]
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
© 2013 IXYS all rights reserved
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