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DPG10I200PM

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC, TO-220FP, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size131KB,4 Pages
ManufacturerIXYS
Environmental Compliance  
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DPG10I200PM Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC, TO-220FP, 2 PIN

DPG10I200PM Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Parts packaging codeTO-220AC
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
applicationFAST SOFT RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.98 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current140 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountNO
technologyAVALANCHE
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DPG 10 I 200 PM
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
V
RRM
=
I
FAV
=
t
rr
=
200 V
10 A
35 ns
DPG 10 I 200 PM
3
1
Backside: isolated
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package:
Housing: TO-220FP
●rIndustry
standard outline
●rPlastic
overmolded tab for
electrical isolation
r
●rIsolation
Voltage 2500 V
●rUL
registered E 72873
●rEpoxy
meets UL 94V-0
●rRoHS
compliant
Ratings
Symbol
V
RRM
I
R
V
F
Definition
max. repetitive reverse voltage
reverse current
Conditions
V
R
= 200 V
V
R
= 200 V
I
F
=
I
F
=
I
F
=
I
F
=
10 A
20 A
10 A
20 A
d = 0.5
T
C
= 125°C
T
VJ
= 175°C
T
VJ
= 150 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 150 °C
T
VJ
= 25 °C
min.
typ.
max.
200
1
0.06
1.27
1.45
0.98
1.17
10
0.74
17.7
4.40
Unit
V
µA
mA
V
V
V
V
A
V
m
Ω
K/W
°C
W
A
A
A
ns
ns
pF
forward voltage
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
I
RM
t
rr
C
J
average forward current
threshold voltage
slope resistance
rectangular
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
-55
T
C
= 25 °C
t = 10 ms (50 Hz), sine
I
F
=
10 A; V
R
= 130 V
T
VJ
= 45°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
-di
F
/dt = 200 A/µs
V
R
= 150 V; f = 1 MHz
3
5.5
35
45
15
175
35
140
reverse recovery time
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20090323a
© 2009 IXYS all rights reserved
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