DS 110
DSA 110
DSI 110
DSAI 110
Rectifier Diodes
Avalanche Diodes
V
RSM
V
900
1300
1300
1700
1900
-
-
V
(BR)min
x
V
R R M
V
V
800
1200
DS
DS
DSA
DSA
DSA
Anode
on
stud
110-08F
110-12F
110-12F
110-16F
110-18F
Cathode
on
DSI
DSI
DSAI
DSAI
DSAI
stud
110-08F
110-12F
110-12F
110-16F
110-18F
V
RRM
= 800 - 1800 V
I
F(RMS)
= 250 A
I
F(AV)M
= 160 A
DO-205 AC
C
A
DS
DSA
A
C
DSI
DSAI
1300 1200
1750 1600
1950 1800
x
Only for Avalanche Diodes
Symbol
I
F(RMS)
I
F(AV)M
P
RSM
I
FSM
Test
Conditions
Maximum
250
160
35
3150
3380
2800
3000
Ratings
A
A
kW
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
Nm
lb.in.
g
Values
T
(vj)
= T
(vj)m
T
case
= 100°C; 180° sine
DSA(I) types, T
(vj)
= T
(vj)m
, t
p
= 10
µs
T
(vj)
= 45°C;
V
R
= 0
T
(vj)
= T
(vj)m
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A = Anode
C = Cathode
M12
Features
International standard package,
JEDEC DO-205 AC (~DO30)
Planar glassivated chips
q
q
I
2
t
T
(vj)
= 45°C
V
R
= 0
T
(vj)
= T
(vj)m
V
R
= 0
49 600
48 000
39 200
37 800
-40...+180
180
-40...+180
Applications
High power rectifiers
DC supplies
Field supply for DC motors
Power supplies
q
q
q
q
q
q
q
T
(vj)
T
(vj)m
T
stg
M
d
Weight
Symbol
I
R
q
Mounting torque
16-20
142-177
130
Characteristic
≤
≤
10
1.4
0.85
1.1
0.35
0.39
0.45
4.25
4.25
100
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
mm
(1
mm
Dimensions in
=
0.0394")
Test
Conditions
T
(vj)
= T
(vj)m
; V
R
= V
RRM
I
F
= 500 A; T
(vj)
= 25°C
mA
V
V
mΩ
K/W
K/W
K/W
mm
mm
m/s
2
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a
For power-loss calculations only
T
(vj)
= T
(vj)m
DC current
180° sine
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Data according to IEC 747-2
IXYS reserves the right to change limits, test conditions and dimensions
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
DS 110
DSA 110
600
typ.
A
500
I
F
400
T
(vj)
= 180°C
T
(vj)
= 25°C
I
FSM
lim.
A
1500
2000
50Hz, 80%⋅V
RRM
T
(vj)
= 45°C
I
2
t
4
300
1000
T
(vj)
= 180°C
10
5
As
6
T
(vj)
= 45°C
2
DSI 110
DSAI 110
V
R
= 0 V
T
(vj)
= 180°C
2
200
500
100
0
0.0
0.5
1.0
V
F
1.5
V 2.0
0
10
-3
10
4
10
-2
10
-1
t
s
10
0
1
2
3
4
5 6 7 ms10
89
t
Fig. 1
300
W
Forward characteristics
Fig. 2
Surge overload current
I
FSM
: Crest value, t: duration
Fig. 3
200
I
2
t versus time (1-10 ms)
R
thJA
:
P
F
200
0.36 K/W
0.7 K/W
1.3 K/W
A
150
I
F(AV)M
100
100
DC
180° sin
120°
60°
30°
50
0
0
50
100
150
I
F(AV)M
A
200 20 40 60 80 100 120 140 160 180
0
°C
T
amb
0
0
40
80
120
160 °C 200
T
c
ase
Fig. 4
0.8
K/W
0.6
Z
thJH
Power dissipation versus forward current and ambient temperature
Fig. 5
Max. forward current at case
temperature 180° sine
R
thJH
for various conduction angles d:
30°
60°
120°
180°
DC
d
DC
180°
120°
60°
30°
R
thJH
(K/W)
0.45
0.516
0.567
0.660
0.733
0.4
Constants for Z
thJH
calculation:
0.2
i
1
2
3
4
R
thi
(K/W)
0.06713
0.06242
0.22045
0.10
t
i
(s)
0.003
0.094
3.846
3.2
0.0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
s
t
10
4
Fig. 6
Transient thermal impedance junction to heatsink
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Industrial Control Electronics
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