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DB4X314K

Description
Rectifier Diode, 2 Element, 0.03A, 30V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI4-G4-B, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size472KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
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DB4X314K Overview

Rectifier Diode, 2 Element, 0.03A, 30V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI4-G4-B, 4 PIN

DB4X314K Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionHALOGEN FREE AND ROHS COMPLIANT, MINI4-G4-B, 4 PIN
Contacts4
Manufacturer packaging codeMINI4-G4-B
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.4 V
JESD-30 codeR-PDSO-G4
Number of components2
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.03 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse current0.3 µA
Maximum reverse recovery time0.001 µs
Reverse test voltage30 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DB4X314K
Silicon epitaxial planar type
For high speed switching circuits
Features
Short reverse recovery time t
rr
Small reverse current I
R
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
Mini4-G4-B
Name
Pin
1: Anode-1
2: Anode-2
Basic Part Number
Dual DB2J314 (Parallel)
3: Cathode-2
4: Cathode-1
Marking Symbol: 4X
Internal Connection
4
3
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
Note) *: Value of each diode in double diodes used.
Symbol
V
R
V
RM
Single
Double
*
Single
Double
*
I
F
I
FM
T
j
T
stg
Rating
30
30
30
20
150
110
125
–55 to +125
Unit
V
V
mA
mA
°C
°C
1
2
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F1
V
F2
I
R
C
t
t
rr
I
F
= 1 mA
I
F
= 30 mA
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
=10 mA, I
rr
= 1 mA,
R
L
= 100
Ω 
1.5
1.0
Conditions
Min
Typ
Max
0.40
1.0
300
Unit
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 1 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ver. BED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: August 2010
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