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DL914(A)(B)

Description
Rectifier Diode, 1 Element, 0.15A, Silicon, MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size116KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

DL914(A)(B) Overview

Rectifier Diode, 1 Element, 0.15A, Silicon, MINIMELF-2

DL914(A)(B) Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTIN LEAD
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
DL914(A)(B)
Features
Low Current Leakage
Compression Bond Construction
Low Cost
500mW 100 Volt
Silicon Epitaxial Diode
MINIMELF
Cathode Mark
Maximum Ratings
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Maximum Thermal Resistance; 35°C/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
Junction
Temperature
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
V
R
V
RM
I
O
P
TOT
T
J
I
FSM
75V
100V
B
C
150mA
500mW
200°C
500mA
Resistive Load
f > 50Hz
A
8.3ms, half sine
DIMENSIONS
INCHES
MIN
.134
.008
.055
MM
MIN
3.40
.20
1.40
V
F
1.0V
I
R
25nA
50µA
4pF
4nS
I
FM
= 10mA;
T
J
= 25°C*
V
R
=20Volts
T
J
= 25°C
T
J
= 150°C
Measured at
1.0MHz, V
R
=4.0V
I
F
=10mA
V
R
= 6V
R
L
=100Ω
DIM
A
B
C
MAX
.142
.016
.059
MAX
3.60
.40
1.50
NOTE
C
J
T
rr
SUGGESTED SOLDER
PAD LAYOUT
.155”
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
.065”
.022”
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