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P4KE18A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size59KB,3 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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P4KE18A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE18A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage18.9 V
Minimum breakdown voltage17.1 V
Processing package descriptionPLASTIC PACKAGE-2
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipZENER
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit1 W
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
shutdown voltage15.3 V
Maximum non-repetitive peak speed power400 W
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
P4KE6.8
THRU
P4KE400A
400 Watt
Transient Voltage
Suppressors
6.8 to 400 Volts
DO-41
Features
Unidirectional And Bidirectional
Low Inductance
High Temp Soldering: 250°C for 10 Seconds At Terminals
For Bidirectional Devices Add “C” To The Suffix Of The Part
Number: i.e. P4KE6.8C or P4KE6.8CA for 5% Tolerance Devices
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
400 Watt Peak Power
Response Time 1 x 10
-12
Seconds For Unidirectional and 5 x 10
-9
For Bidirectional
Figure 1
D
10
P
PP -
KW
1.0
A
Cathode
Mark
0.1
.1µse
1µsec
10µsec
100µsec
1msec
c
t
P
0
Peak Pulse Power (P ) –
versus
– Pulse Time (t
P
)
PP
B
D
Figure 2 - Pulse Waveform
t
r
100
% I
PP
50
Peak Value I
PP
Half Wave I
PP
/2
10 x 1000 Wave as
defined by R.E.A.
DIM
A
B
C
D
INCHES
MIN
.166
.080
.028
1.000
C
Test wave
form
parameters:
t
r
= 10
µsec
DIMENSIONS
MM
MIN
4.10
2.00
.70
25.40
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
NOTE
0
1
msec
2
3
Peak Pulse Current (% I
P
) -
Versus
- Time (t)
P
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