P4KE7.5A-G datasheet, PDF - EEWORLD Datasheet

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P4KE7.5A-G: Description400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41; CategoryDiscrete semiconductor diode; File Size123KB，6 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/; Environmental Compliance

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P4KE7.5A-G Overview

400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE7.5A-G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Comchip Technology
Reach Compliance Code	_compli
ECCN code	EAR99
Breakdown voltage nominal value	7.5 V
Maximum clamping voltage	11.3 V
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 code	e3
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum repetitive peak reverse voltage	6.4 V
surface mount	NO
Terminal surface	Tin (Sn)
Maximum time at peak reflow temperature	NOT SPECIFIED

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400W Transient Voltage Suppressor

P4KE-G Series

Stand-off Voltage: 6.8 ~ 600V

Power Dissipation: 400 Watts

RoHS Device

Features

-Glass passivated chip

-Low leakage

-Uni and Bidirection unit

-Excellent clamping capability

-The plastic material has UL recognition 94V-0

-Fast response time: typically less than 1.0pS from

0 volts to BV min

DO-41

0.033(0.84)

DIA.

0.028(0.71)

1.000(25.40)

MIN.

0.205(5.21)

0.165(4.19)

Mechanical Data

-Case: Molded plastic DO-41

-Polarity: By cathode band denotes unidirectional

device none cathode band denoted bi-directional

device

-Weight: 0.34 grams

1.000(25.40)

MIN.

0.117(2.97)

DIA.

0.090(2.29)

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Peak power dissipation a 10/1000

μs

waveform

(Note 1)

Peak pulse current with a 10/1000

μs

waveform

(Note 1)

Power dissipation on infinite heatsink at T

=75 C

Peak forward surge current, 8.3mS single

half sine-wave unidirectional only(Note 2)

Maximum instantaneous forward voltage

at 25A for unidirectional only (Note 3)

Operating junction and storage temperature

range

Symbol

Value

400

Unit

See Next Table

1.0

3.5/5.0

FSM

, T

STG

-55 to +150

NTOES:

(1) Non-repetitive current pulse, per fig.5 and derated above TA=25

C per fig. 1.

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.

(3) V

<3.5V for devices of V

<200V and V

<5.0V for devices of V

>201V.

REV:B

QW-BTV05

Page 1

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