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P4SMA82A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size189KB,4 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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P4SMA82A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC

P4SMA SERIES
400 Watts Surface Mount
Transient Voltage Suppressor
SMA/DO-214AC
Features
For surface mounted application in order to optimize
board space
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0
volt to BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
o
260 C / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
400 watts peak pulse power capability with a 10 x
1000 us waveform by 0.01% duty cycle
Dimensions in inches and (millimeters)
Mechanical Data
Case: Molded plastic
Terminals: Pure tin plated lead free,
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA STD RS-481)
Weight: 0.064 gram
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms(
N
ote 1)
o
Symbol
P
PK
I
FSM
V
F
Value
Minimum 400
40
3.5
Units
Watts
Amps
Volts
o
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3)
Maximum Instantaneous Forward Voltage at 25.0A for
Unidirectional Only
Operating and Storage Temperature Range
T
J
, T
STG
-55 to + 150
1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25
o
C Per Fig. 2.
Notes:
2. Mounted on 5.0mm
2
(.013 mm Thick) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per
Minute Maximum.
C
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types P4SMA 6.8 through Types P4SMA200A.
2. Electrical Characteristics Apply in Both Directions.
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