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P600M

Description
6 A, 1000 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size41KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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P600M Overview

6 A, 1000 V, SILICON, RECTIFIER DIODE

P600M Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current6 A
Maximum non-repetitive peak forward current450 A
BL
FEATURES
Low leakage
GALAXY ELECTRICAL
P600A---P600S
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
PLASTIC SILICON RECTIFIER
Low cost
Diffused junction
Low forward voltage drop
High current capability
Easily cleaned witn Freon,Alcohol,lsopropanol
j
and similar solvents
The plastic material carries U/L recognition 94V-0
R-6
MECHANICAL DATA
Case:JEDEC R-6,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.072 ounces,2.04 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
P600
A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
P600
B
100
70
100
P600
D
200
140
200
P600
G
400
280
400
6.0
P600
J
600
420
600
P600
K
800
560
800
P600
M
1000
700
1000
P600
UNITS
S
1200
840
1200
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
400.0
A
Maximum instantaneous forw ard voltage
@ 6.0 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
0.9
10.0
100.0
120
10
-55----+150
-55----+150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0260028
BL
GALAXY ELECTRICAL
1.

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P600M P600B P600G P600A P600D P600J P600K P600S
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