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P600M-6A10

Description
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
File Size38KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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P600M-6A10 Overview

TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
6A05/P600A THRU 6A10/P600M
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE:50-1000V
CURRENT:6.0A
FEATURES
·Low
cost
·Low
leakage
·Low
forward voltage drop
·High
current capability
·High
surge current capability
R-6
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
2.08 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
P600A P600B P600D P600G P600J P600K P600M
SYMBOL
units
6A05 6A1 6A2 6A4 6A8 6A8 6A10
Maximum Recurrent Peak Reverse Voltage
V
RRM
50
100
200
400
600
800 1000
V
Maximum RMS Voltage
V
RMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V
DC
50
100
200
400
600
800 1000
V
Maximum Average Forward rectified Current
at T
A
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 6.0A
DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
=25°C
I
R
@ T
A
=100°C
Maximum Full Load Reverse Current Average,
Full Cycle .375”(9.5mm) lead length at T
L
=75°C
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Notes:
I
o
I
FSM
V
F
6.0
250
1.1
10
500
50
C
J
R
θJA
150
10
pF
°C/W
A
A
V
µA
Measured at 1MHz and applied reverse voltage of 4.0 volts
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