PH1819-4N
Wireless Bipolar Power Transistor
4W, 1.78-1.90 GHz
Features
•
•
•
•
•
•
•
•
NPN silicon microwave power transistor
Designed for linear amplifier applications
Class AB: -34 dBc typ. 3rd IMD at 4 W PEP
Class A: +44 dBm typ. 3rd order intercept point -
Common emitter configuration
Internal input impedance matching
Diffused emitter ballasting
Gold metallization system
M/A-COM Products
Released - Rev. 07.07
Outline Drawing
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
V
CBO
V
CES
V
EBO
I
C
P
D
T
J
T
STG
θ
JC
60
60
3.0
0.7
19.5
200
-55 to + 150
Units
V
V
V
A
W
°C
°C
°C/W
7.5
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Forward Current Gain
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
3rd Order IMD
BV
CES
I
CES
BV
CEO
BV
EBO
h
FE
G
P
ŋ
C
Min
60
-
20
3.0
15
10
25
10
-
-
Max
-
2.0
-
-
120
-
-
-
10:1
-30
Units
V
mA
V
V
-
dB
%
dB
-
dBc
I
C
= 5mA
V
CE
= 24V
I
C
= 2.5mA
I
B
= 5mA
V
CE
= 5V, I
C
= 0.1A
Test Conditions
V
CC
= 26V, I
CQ
= 20 mA, P
out
= 4 W, F =1850 GHz,
Δ
F=100kHz
V
CC
= 26V, I
CQ
= 20 mA, P
out
= 4 W, F =1850 GHz,
Δ
F=100kHz
V
CC
= 26V, I
CQ
= 20 mA, P
out
= 4 W, F =1850 GHz,
Δ
F=100kHz
V
CC
= 26V, I
CQ
= 20 mA, P
out
= 4 W, F =1850 GHz,
Δ
F=100kHz
V
CC
= 26V, I
CQ
= 20 mA, P
out
= 4 W, F =1850 GHz,
Δ
F=100kHz
RL
VSWR
IMD
3
TYPICAL OPTIMUM DEVICE IMPEDANCES
F (GHz)
1780
1850
1900
Z
IN
(Ω)
3.5+j9.3
3.1+j9.2
3.3+j8.9
Z
LOAD
(Ω)
3.5+j5.6
4.5+j5.2
4.8+j5.5
INPUT
NETWORK
Z
LOAD
OUTPUT
NETWORK
Z
IN
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
PH1819-4N
Wireless Bipolar Power Transistor
4W, 1.78-1.90 GHz
TEST FIXTURE DIMENSIONS
M/A-COM Products
Released - Rev. 07.07
TEST FIXTURE ASSEMBLY
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
PH1819-4N
Wireless Bipolar Power Transistor
4W, 1.78-1.90 GHz
Typical Broadband Performance Curves
GAIN-EFFICIENCY
VS
FREQUENCY
P
out
=4.0 W V
CC
=26 V I
CQ
=20 mA
OUTPUT POWER
VS
COLLECTOR VOLTAGE
I
CC
=20 mA F1=1850.0 MHz F2=1850.1 MHz
M/A-COM Products
Released - Rev. 07.07
14
13
G
P
(dB)
12
100
75
P
OUT
(W)
50
Eff (%)
8
6
4
2
0
Gain
P
IN
=0.4 mA
P
IN
=0.2mA
P
IN
=0.01mA
11
10
9
1780
Efficiency
25
0
1900
1850
FREQUENCY (MHz)
12
14
16
18
20
22
24
26
COLLECTOR VOLTAGE (V)
Gain
VS
P
OUT
F1= 1850.0 MHz F2= 1850.1 MHz
16
I
CO
=300mA, 22.0V
-15
IMD
VS
P
OUT
V
CC
= 26 V F1 = 1850.0 MHz F2= 1850.1 MHz
Class AB
1.8
1.5
14
IMD (dBc)
I
CO
=50mA, 26.0V
-30
G
P
(dB)
3rd
5th
1.2
I
C
(A)
0.9
12
10
8
23
27
I
CO
=20mA, 26.0V
-45
7th
I
C
0.6
0.3
0
39
31
P
OUT
(dBm)
35
39
-60
23
27
31
P
OUT
(PEP) in dBm
35
V
CC
= 26 V I
CO
= 20 mA F1 = 1850.0 MHz F2= 1850.1 MHz
IMD
VS
P
OUT
Class AB
V
CC
= 22 V I
CO
= 300 mA F1 = 1850.0 MHz F2= 1850.1 MHz
IMD
VS
P
OUT
Class A
-15
1.8
1.5
-15
0.9
-30
G
P
(dB)
3rd
1.2
G
P
(dB)
0.9
5th
7th
I
C
-30
I
C
(A)
3rd
0.6
I
C
(A)
0.3
5th
7th
-45
0.6
0.3
0
35
39
-45
I
C
-60
23
27
P
OUT
31
(PEP) in dBm
-60
23
27
31
P
OUT
(PEP) in dBm
35
0
39
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
京公网安备 11010802033920号
EEWORLD
