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PH1920-45

Description
Wireless Bipolar Power Transistor 45W, 1930-1990 MHz
CategoryDiscrete semiconductor    The transistor   
File Size127KB,2 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Environmental Compliance
Download Datasheet Parametric View All

PH1920-45 Overview

Wireless Bipolar Power Transistor 45W, 1930-1990 MHz

PH1920-45 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMACOM
package instructionFLANGE MOUNT, R-XDFM-F2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionBASE
Maximum collector current (IC)5.5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-XDFM-F2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PH1920-45
Wireless Bipolar Power Transistor
45W, 1930-1990 MHz
Features
NPN silicon microwave power transistor
Common emitter class AB operation
Internal input and output impedance matching
Diffused emitter ballasting
Gold metallization system
M/A-COM Products
Released - Rev. 07.07
Outline Drawing
ABSOLUTE MAXIMUM RATING AT 25°C
Parameter
Symbol
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
V
CBO
V
CES
V
EBO
I
C
P
D
T
J
T
STG
θ
JC
20
65
3.0
5.5
100
200
-65 to + 150
Units
V
V
V
A
W
°C
°C
°C/W
1.3
ELECTRICAL SPECIFICATIONS AT 25°C
Parameter
Symbol
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
G
P
ŋ
C
Min
8
40
10
-
Max
-
-
-
3:1
Units
dB
%
dB
-
Test Conditions
V
CC
= 25V, I
CQ
= 200 mA, P
out
= 45 W, F =1930, 1990 MHz
V
CC
= 25V, I
CQ
= 200 mA, P
out
= 45 W, F =1930, 1990 MHz
V
CC
= 25V, I
CQ
= 200 mA, P
out
= 45 W, F =1930, 1990 MHz
V
CC
= 25V, I
CQ
= 200 mA, P
out
= 45 W, F =1930, 1990 MHz
RL
VSWR
BROADBAND TEST FIXTURE IMPEDANCES
F (GHz)
1930
1960
1990
Z
IN
(Ω)
2.8-j5.5
2.7-j5.4
2.6-j5.3
Z
LOAD
(Ω)
4.8-j1.1
5.0-j1.3
5.2-j1.5
50Ω
TEST FIXTURE
INPUT
CIRCUIT
TEST FIXTURE
OUTPUT
CIRCUIT
Z
IF
Z
OF
50Ω
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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