PH2856-160 datasheet, PDF - EEWORLD Datasheet

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PH2856-160: DescriptionRadar Pulsed Power Transistor 160W, 2.856 GHz, 12レs Pulse, 10% Duty; CategoryDiscrete semiconductor The transistor; File Size95KB，3 Pages; ManufacturerMACOM; Websitehttp://www.macom.com; Environmental Compliance

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PH2856-160 Overview

Radar Pulsed Power Transistor 160W, 2.856 GHz, 12レs Pulse, 10% Duty

PH2856-160 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	MACOM
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Reach Compliance Code	compli
Other features	WITH EMITTER BALLASTING RESISTORS
Shell connection	BASE
Maximum collector current (IC)	15 A
Configuration	SINGLE WITH BUILT-IN RESISTOR
highest frequency band	S BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	700 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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PH2856-160

Radar Pulsed Power Transistor

160W, 2.856 GHz, 12µs Pulse, 10% Duty

Features

•

NPN silicon microwave power transistors

Common base configuration

Broadband Class C operation

High efficiency inter-digitized geometry

Diffused emitter ballasting resistors

Gold metallization system

Internal input and output impedance matching

Hermetic metal/ceramic package

RoHS compliant

M/A-COM Products

Released, 10 Aug 07

Outline Drawing

Absolute Maximum Ratings at 25°C

Parameter

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (Peak)

Power Dissipation @ +25°C

Storage Temperature

Junction Temperature

Symbol

CES

EBO

TOT

STG

Rating

3.0

15.0

700

-65 to +200

200

Units

°C

Electrical Specifications: T

= 25 ± 5°C (

Room Ambient

)

Parameter

Test Conditions

Frequency

Symbol

CES

F = 2.856 GHz

TH(JC)

Min

7.5

Max

7.5

0.25

28.5

-6

3:1

Units

°C/W

Collector-Emitter Breakdown Voltage I

= 40mA

Collector-Emitter Leakage Current

Thermal Resistance

Output Power

Power Gain

Collector Efficiency

Input Return Loss

Load Mismatch Tolerance

= 36V

Vcc = 40V, Pout = 160W

VSWR-T

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

•

North America

Tel: 800.366.2266 / Fax: 978.366.2266

is considering for development. Performance is based on target specifications, simulated results,

•

Europe

Tel: 44.1908.574.200 / Fax: 44.1908.574.300

and/or prototype measurements. Commitment to develop is not guaranteed.

•

Asia/Pacific

Tel: 81.44.844.8296 / Fax: 81.44.844.8298

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Visit www.macomtech.com for additional data sheets and product information.

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

Commitment to produce in volume is not guaranteed.

changes to the product(s) or information contained herein without notice.

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