2SB649/2SB649A
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
PNP Type
Plastic Encapsulate Transistors
TO-126C
8.0
±0.2
2.0
±0.2
4.14
±0.1
3.2
±0.2
FEATURES
Power smplifier applications
Power dissipation
P
CM
:
1 W
（Tamb=25℃）
Collector current
I
CM
:
- 1.5 A
Collector-base voltage
V
(BR)CBO
: -180 V
Collector-emitter voltage
V
CEO
2SB649 : -120 V
2SB649A : -160 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
*
V
BE
*
V
CE
=- 5V, I
C
= -500mA
I
C
=- 500 mA, I
B
=- 50mA
V
CE
=- 5V,I
C
=-150mA
,,
V
CE
=-5V I
C
=- 150 mA
V
CB
=-10 V , I
E
=0,f=1MHz
11.0
±0.2
1
2
3
O2.8
±0.1
O
3.2
±0.1
1.4
±0.1
1.27
±0.1
15.3
±0.2
0.76
±0.1
2.28 Typ.
4.55
±0.1
0.5
± 0.1
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
unless
Test
otherwise
specified）
MIN
-180
MAX
UNIT
V
V
V
-10
-10
conditions
Ic=-1mA
，
I
E
=0
Ic=-10mA
，
I
B
=0
I
E
=-1mA， I
c
=0
V
CB
=- 160 V, I
E
=0
V
EB
= -4V ,
I
C
=0
2SB649
2SB649A
2SB649
2SB649A
-120
-160
-5
μ
A
μ
A
V
CE
= -5V, I
C
= -150 mA
60
60
30
320
200
-1
-1.5
140
27
V
V
MHz
pF
f
T
C
ob
*
The 2SB649 and 2SB649A are grouped by h
FE1
as follows.
Rank
2SB649
2SB649A
B
60 - 120
60 - 120
C
100 - 200
100 - 200
D
160 - 320
----
Any changing of specification will not be informed individual
Page 1 of
2
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
2SB649/2SB649A
Elektronische Bauelemente
PNP Type
Plastic Encapsulate Transistors
Maximum Collector Dissipation
Curve
30
Collector power dissipation P
C
(W)
–3
I
Cmax
Collector current I
C
(A)
–1.0
Area of Safe Operation
(–13.3 V, –1.5 A)
20
(–40 V, –0.5 A)
–0.3
–0.1
DC Operation (T
C
= 25°C)
10
–0.03
2SB649
–0.01
–1
(–120 V, –0.038 A)
(–160 V, –0.02 A)
2SB649A
0
50
100
Case temperature T
C
(°C)
150
–3
–10
–30
–100 –300
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
–1.0
.5
–5
Typical Transfer Characteristics
–500
V
CE
= –5 V
Collector current I
C
(mA)
–100
Collector current I
C
(A)
–0.8
Ta = 75
°
C
0
I
C
= 10 I
B
–0.6
–2.0
–1.5
–0.4
–1.0
–10
–0.2
–0.5 mA
I
B
= 0
0
–30
–50
–10
–20
–40
Collector to emitter voltage V
CE
(V)
–1
–0.2 –0.4 –0.6 –0.8 –1.0
Base to emitter voltage V
BE
(V)
DC Current Transfer Ratio
vs. Collector Current
V
CE
= –5V
Ta = 75
°C
25
°C
Collector to Emitter Saturation
Voltage vs. Collector Current
Collector to emitter saturation voltage
V
CE(sat)
(V)
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
350
DC current transfer ratio h
FE
350
250
200
150
100
50
–25°C
25
–25
0
5.
–
–4.5
.0
–4
.5
–3
0
–3.
–2.5
T
C
= 25°C
Ta
–10
–100
Collector current I
C
(mA)
=7
–25
25
–1,000
0
–1
–10
–100
–1,000
Collector current I
C
(mA)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page
2of 2
5
°
C
P
C
=
20
W
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