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DISCRETE SEMICONDUCTORS
DATA SHEET
PMBS3906
PNP general purpose transistor
Product data sheet
Supersedes data of 1999 Apr 22
2004 Feb 02
NXP Semiconductors
Product data sheet
PNP general purpose transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
General purpose switching and amplification, e.g.
telephony and professional communication equipment.
DESCRIPTION
handbook, halfpage
PMBS3906
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: PMBS3904.
MARKING
TYPE NUMBER
PMBS3906
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PMBS3906
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
*O6
Top view
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current capability
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−40
−40
−5
−100
−200
−200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2004 Feb 02
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
C
= 0; V
EB
=
−5
V
V
CE
=
−1
V; (see Fig.2)
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA; note 1
I
C
=
−100
mA; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA; note 1
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA; note 1
I
E
= i
e
= 0; V
CB
=
−5
V; f = 100 MHz
I
C
= i
c
= 0; VE
B
=
−0.5
V; f = 100 MHz
I
C
=
−10
mA; V
CE
=
−20
V;
f = 100 MHz
I
C
=
−100 µA;
V
CE
=
−5
V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
I
Con
=
−10
mA; I
Bon
=
−1
mA;
I
Boff
= 1 mA
60
80
100
60
30
−
−
−
−
−
−
150
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMBS3906
VALUE
500
UNIT
K/W
MAX.
−50
−50
−
−
300
−
−
−250
−400
−850
−950
4.5
12
−
4
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
(see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
−
−
−
−
−
−
100
50
50
700
600
100
ns
ns
ns
ns
ns
ns
2004 Feb 02
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
PMBS3906
handbook, full pagewidth
300
MBH726
hFE
200
VCE =
−5
V
100
0
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
Fig.2 DC current gain; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−5
V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
V
BB
= 1.9 V; V
CC
= 3 V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
2004 Feb 02
4
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