TO-92 Plastic-Encapsulate Transistors
8550S
FEATURE
Power dissipation
P
CM:
TRANSISTOR (PNP)
TO-92
0.625
W (Tamb=25℃)
1.EMITTER
Collector current
-0.5
A
I
CM:
Collector-base voltage
-40
V
V
(BR)CBO:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
2. COLLECTOR
3.BASE
1 2 3
unless otherwise specified)
Test
conditions
MIN
-40
-25
-5
-0.1
-0.1
-0.1
85
50
-0.6
-1.2
V
V
300
TYP
MAX
UNIT
V
V
V
Ic= -100
µA
, I
E
=0
Ic= -0.1 mA, I
B
=0
I
E
= -100
µ
A, I
C
=0
V
CB
= -40V, I
E
=0
V
CE
= -20V, I
B
=0
V
EB
= - 3V, I
C
=0
V
CE
= -1 V, I
C
= -50mA
V
CE
= -1 V, I
C
= -500mA
I
C
=-500mA, I
B
=-50 mA
I
C
=-500mA, I
B
=-50 mA
V
CE
=- 6 V, I
C
=-20mA
µ
A
µ
A
µ
A
Transition frequency
f
T
f =
30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
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