85C72-I/J datasheet, PDF - EEWORLD Datasheet

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85C72-I/J: Description128 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8; Categorystorage storage; File Size307KB，8 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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85C72-I/J Overview

128 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8

85C72-I/J Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microchip
Parts packaging code	DIP
package instruction	CERDIP-8
Contacts	8
Reach Compliance Code	unknown
Other features	100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS
Maximum clock frequency (fCLK)	0.1 MHz
Data retention time - minimum	40
Durability	1000000 Write/Erase Cycles
I2C control byte	1010DDDR
JESD-30 code	R-GDIP-T8
JESD-609 code	e0
memory density	1024 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	8
word count	128 words
character code	128
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128X8
Output characteristics	OPEN-DRAIN
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP8,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Serial bus type	I2C
Maximum standby current	0.0001 A
Maximum slew rate	0.00425 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum write cycle time (tWC)	1 ms
Base Number Matches	1

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85C72-I/J Related Products

	85C72-I/J	85C72-E/J	85C92-E/J	85C82-E/J	85C82-I/J	85C92-I/J
Description	128 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8	128 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8	512 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8	256 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8	256 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8	512 X 8 I2C/2-WIRE SERIAL EEPROM, CDIP8, CERDIP-8
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Microchip	Microchip	Microchip	Microchip	Microchip	Microchip
Parts packaging code	DIP	DIP	DIP	DIP	DIP	DIP
package instruction	CERDIP-8	CERDIP-8	CERDIP-8	DIP, DIP8,.3	DIP, DIP8,.3	DIP, DIP8,.3
Contacts	8	8	8	8	8	8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Other features	100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS	10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS	10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS	10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS	100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS	100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS
Maximum clock frequency (fCLK)	0.1 MHz	0.1 MHz	0.1 MHz	0.1 MHz	0.1 MHz	0.1 MHz
Data retention time - minimum	40	40	200	40	40	200
Durability	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
I2C control byte	1010DDDR	1010DDDR	1010DDMR	1010DDDR	1010DDDR	1010DDMR
JESD-30 code	R-GDIP-T8	R-GDIP-T8	R-GDIP-T8	R-GDIP-T8	R-GDIP-T8	R-GDIP-T8
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	1024 bit	1024 bit	4096 bit	2048 bit	2048 bit	4096 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	8	8	8	8	8	8
word count	128 words	128 words	512 words	256 words	256 words	512 words
character code	128	128	512	256	256	512
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	125 °C	125 °C	125 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	128X8	128X8	512X8	256X8	256X8	512X8
Output characteristics	OPEN-DRAIN	OPEN-DRAIN	OPEN-DRAIN	OPEN-DRAIN	OPEN-DRAIN	OPEN-DRAIN
Package body material	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP8,.3	DIP8,.3	DIP8,.3	DIP8,.3	DIP8,.3	DIP8,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Serial bus type	I2C	I2C	I2C	I2C	I2C	I2C
Maximum standby current	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A	0.0001 A
Maximum slew rate	0.00425 mA	0.00425 mA	0.00425 mA	0.0045 mA	0.0045 mA	0.00425 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	AUTOMOTIVE	AUTOMOTIVE	AUTOMOTIVE	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum write cycle time (tWC)	1 ms	1 ms	1 ms	1 ms	1 ms	1 ms
Base Number Matches	1	1	1	1	1	1

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