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8T64TH

Description
TRIAC, 600V V(DRM), 4A I(T)RMS, TO-202,
CategoryAnalog mixed-signal IC    Trigger device   
File Size212KB,2 Pages
ManufacturerHutson Industries
Download Datasheet Parametric View All

8T64TH Overview

TRIAC, 600V V(DRM), 4A I(T)RMS, TO-202,

8T64TH Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerHutson Industries
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
Critical rise rate of commutation voltage - minimum value4 V/us
Critical rise rate of minimum off-state voltage150 V/us
Maximum DC gate trigger current25 mA
Maximum DC gate trigger voltage2.5 V
Maximum holding current30 mA
JEDEC-95 codeTO-202
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Maximum leakage current0.5 mA
Number of components1
Number of terminals3
Maximum operating temperature110 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current4 A
Maximum repetitive peak off-state leakage current500 µA
Off-state repetitive peak voltage600 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeTRIAC
Base Number Matches1
MAXIMUM RATINGS
REPETITIVE PEAK OFF-STATE VOLTAGE (1)
GATE OPEN, AND TJ = 110° C
RMS ON-STATE CURRENT AT TC = 80º C AND
CONDUCTION, ANGLE OF 360º
PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT,
ONE-CYCLE, AT 50HZ OR 60HZ
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.
PEAK GATE-POWER DISSIPATION AT IGT < IGTM
AVERAGE GATE - POWER DISSIPATION
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE, Tj
ELECTRICAL CHARACTERISTICS
AT SPECIFIED CASE TEMPERATURE
PEAK OFF - STATE CURRENT (1) GATE OPEN
TC = 110° C VDRM = MAX. RATING
MAXIMUM ON - STATE VOLTAGE, (1) AT TC = 25° C AND
IT = RATED AMPS
DC HOLDING CURRENT, (1) GATE OPEN AND TC = 25° C
CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE, (1)
FOR VD = VDRM GATE OPEN, TC = 110° C
CRITICAL RATE-OF-RISE OF COMMUNICATION
VOLTAGE, (1) AT TC = 80° C, GATE UNENERGIZED,
VD = VDRM, IT = IT (RMS)
DC GATE - TRIGGER CURRENT FOR
VD = 12VDC. RL = 60 OHM AND AT TC = 25° C
(T2 + GATE + T2 - GATE-) Q 1 & 3
(T2 + GATE - T2 - GATE +) Q 2 & 4
DC GATE - TRIGGER VOLTAGE FOR
VD = 12VDC. RL = 60 OHM AND AT TC = 25° C
GATE CONTROLLED TURN-ON TIME
FOR VD = VDRM IGT = 80MA TR = 0.1 µSEC.
IT = 6A (PEAK) AND TC = 25° C
THERMAL RESISTANCE, JUNCTION-TO-CASE
NOTES:
(1) ALL VALUES APPLY IN BOTH DIRECTIONS
SYMBOL VDRM
VDRM
IT(RMS)
ITSM
IGTM
PGM
PG(AV)
Tstg
Toper
200
400
600
DEVICE NUMBERS
8T24*
8T44*
8T64*
4.0
40
1.2
15
0.3
8T26*
8T46*
8T66*
6.0
60
1.6
18
0.4
-40 to +150
-40 to +110
8T28*
8T48*
8T68*
8.0
80
1.6
18
0.4
UNITS
VOLT
AMP
AMP
AMP
WATT
WATT
°C
°C
IDRM
VTM
IHO
CRITICAL
dv/dt
COMMUTATING
0.5
1.6
30
150
4
SEE
GATE
SPECS.
2.5
3
4.0
0.5
1.6
50
150
4
SEE
GATE
SPECS.
2.5
3.
4.2
0.5
1.6
50
150
4
SEE
GATE
SPECS.
2.5
3
3.8
MA
MAX.
VOLT
MAX.
MA
MAX.
V/µSEC.
V/µSEC.
dv/dt
IGT
MA
MAX.
VOLT
MAX.
µSEC.
°C / WATT
TYP
VGT
Tgt
R0J-C
GATE SPECS
SUFFIX
I
II
III
A
50
N/S
50
HA
25
N/S
25
SH
25
25
25
TH
25
25
25
*Add required suffix letter to part number.
--Other gate specs available consult factory---
IV
N/S
N/S
25
N/S
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