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RD15HVF1

Description
RF POWER MOS FET Silicon MOSFET Power Transistor, 175MHz520MHz,15W
CategoryDiscrete semiconductor    The transistor   
File Size361KB,9 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Environmental Compliance
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RD15HVF1 Overview

RF POWER MOS FET Silicon MOSFET Power Transistor, 175MHz520MHz,15W

RD15HVF1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMitsubishi
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PSFM-T3
JESD-609 codee4
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)48 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceSilver (Ag)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
DRAWING
9.1+/-0.7
1.3+/-0.4
3.6+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
DESCRIPTION
RD15HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers applica
-tions.
OUTLINE
3.2+/-0.4
12.3MIN
High power and High Gain:
Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ. on VHF Band
High Efficiency: 55%typ. on UHF Band
4.8MAX
9+/-0.4
FEATURES
12.3+/-0.6
2
1.2+/-0.4
0.8+0.10/-0.15
1 2 3
APPLICATION
3.1+/-0.6
5deg
4.5+/-0.5
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.5+0.10/-0.15
2.5 2.5
RoHS COMPLIANT
9.5MAX
note:
RD15HVF1-101 is a RoHS compliant products.
Torelance of no designation means typical value.
RoHS compliance is indicate by the letter “G” after the lot
Dimension in mm.
marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
PINS
1:GATE
2:SOURCE
3:DRAIN
RD15HVF1
MITSUBISHI ELECTRIC
1/9
7 Mar 2008

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