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RD36EAB4

Description
8.795 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
Categorysemiconductor    Discrete semiconductor   
File Size41KB,8 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
Download Datasheet View All

RD36EAB4 Overview

8.795 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34

DATA SHEET
ZENER DIODES
RD2.0ES to RD39ES
400 mW DHD ZENER DIODE
(DO-34)
DESCRIPTION
NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34
Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)
construction having allowable power dissipation of 400 mW.
PACKAGE DIMENSIONS
(in millimeters)
φ
0.4
FEATURES
• DO-34 Glass sealed package
This diode can be inserted into a PC board with a shorter pitch (5 mm)
5 mm
Cathode
indication
25 MIN.
φ
2.0 MAX.
25 MIN.
• Planar process
• DHD (Double Heatsink Diode) construction
• V
Z
Applied E24 standard
ORDERING INFORMATION
RD2.0ES to RD39ES with suffix "AB1", "AB2", or "AB3" should be applied
for orders for suffix "AB".
DO-34 (JEDEC)
Marking color: Black
APPLICATIONS
Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Forward Current
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
I
F
P
P
RSM
T
j
T
stg
150 mA
400 mW
100 W (t = 10
µ
s)
175
°C
–65 to +175
°C
to see Fig. 6
to see Fig. 10
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. D13935EJ6V0DS00 (6th edition)
(Previous No. DC-2140)
Date Published March 1999 N CP(K)
Printed in Japan
©
2.4 MAX.
1984
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