EEWORLDEEWORLDEEWORLD

Part Number

Search

RD38F2010W0YTQ0

Description
Wireless Flash Memory (W18/W30 SCSP)
Categorystorage    storage   
File Size604KB,46 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

RD38F2010W0YTQ0 Overview

Wireless Flash Memory (W18/W30 SCSP)

RD38F2010W0YTQ0 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNumonyx ( Micron )
package instructionFBGA, BGA88,8X12,32
Reach Compliance Codeunknow
JESD-30 codeR-PBGA-B88
Memory IC TypeMEMORY CIRCUIT
Mixed memory typesFLASH+PSRAM
Number of terminals88
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA88,8X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.8,3 V
Certification statusNot Qualified
Maximum standby current0.000005 A
Maximum slew rate0.055 mA
surface mountYES
technologyHYBRID
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Base Number Matches1
Numonyx™ Wireless Flash Memory
(W18/W30 SCSP)
32WQ and 64WQ Family with Asynchronous RAM
Datasheet
Product Features
Device Architecture
— Flash Density: 32-Mbit, 64-Mbit
— Async PSRAM Density: 16-Mbit, 32-Mbit
— Top, Bottom or Dual flash parameter
configuration
Device Voltage
— Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V
— RAM VCC = 1.8 V or 3.0 V
Device Packaging
— 88 balls (8 x 10 active ball matrix)
— Area: 8x10 mm
— Height: 1.2 mm to 1.4 mm
PSRAM Performance
— 70 ns initial access, 25 ns async page reads at
1.8 V I/O
— 70 ns initial access async PSRAM at 1.8 V
I/O
— 70 ns initial access, 25 ns async page
reads at 3.0 V I/O
SRAM Performance
— 70 ns initial access at 1.8 V or 3.0 V I/O
Quality and Reliability
— Extended Temperature: –25 °C to +85 °C
— Minimum 100K flash block erase cycle
— 90 nm ETOX™ IX flash technology
— 130 nm ETOX™ VIII flash technology
Flash Performance
— 65 ns initial access at 1.8 V I/O
— 70 ns initial access at 3.0 V I/O
— 25 ns async page at 1.8 V or 3.0 V I/O
— 14 ns sync reads (t
CHQV
) at 1.8 V I/O
— 20 ns sync reads (t
CHQV
) at 3.0 V I/O
— Enhanced Factory Programming:
3.10 µs/Word (Typ)
Flash Architecture
— Read-While-Write/Erase
— Asymmetrical blocking structure
— 4-KWord parameter blocks (Top or
Bottom)
— 32-KWord main blocks
— 4-Mbit partition size
— 128-bit One-Time Programmable
(OTP) Protection Register
— Zero-latency block locking
— Absolute write protection with block
lock using F-VPP and F-WP#
Flash Software
— Numonyx™ Flash Data Integrator
(FDI) and Common Flash Interface
(CFI)
Order Number: 251407-13
November 2007

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2451  556  761  1646  981  50  12  16  34  20 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号